公开(公告)号：US11238934B2

公开(公告)日：2022-02-01

申请号：US16991912

申请日：2020-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan Nam ,  Euihyun Cheon ,  Byungjun Min

IPC: G11C16/08 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  G11C16/16 ,  G11C16/04

Abstract: A nonvolatile memory device includes a peripheral circuit region and a memory cell region. The peripheral circuit region includes a block selecting circuit, a block unselecting circuit, and a first metal pad. The memory cell region is vertically connected to the peripheral circuit region, and includes a first memory block and a second metal pad directly connected to the first metal pad. The block selecting circuit is connected with ground selection lines, word lines, and string selection lines, and provides corresponding driving voltages to the ground selection lines, the word lines, and the string selection lines in response to a block selection signal corresponding to the first memory block, respectively. The block unselecting circuit is connected only with specific string selection lines, and provides an off-voltage only to the specific string selection lines in response to a block un-selection signal.

公开(公告)号：US20240143876A1

公开(公告)日：2024-05-02

申请号：US18462702

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jichull Jeong ,  Taehyun Kim ,  Hyunjoong Kim ,  Euihyun Cheon

IPC: G06F30/27 ,  G06N3/092

CPC classification number: G06F30/27 ,  G06N3/092 ,  H03K19/20

Abstract: A simulation method and a simulation device are disclosed. A simulation method according to the inventive concept is provided. A simulation method of the inventive concept may include obtaining an initial state variable and an initial reward variable detected from the semiconductor device, training an agent to output a first action variable of a reinforcement learning model based on the initial state variable and the initial reward variable; and generating a first state variable of the reinforcement learning model and generating a first reward variable, based on the first action variable, wherein the first reward variable includes a skew reward variable for rewarding a skew occurring in the semiconductor device and a duty reward variable for rewarding a duty error rate of an output signal output from the semiconductor device.

公开(公告)号：US10777233B1

公开(公告)日：2020-09-15

申请号：US16590326

申请日：2019-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan Nam ,  Euihyun Cheon ,  Byungjun Min

IPC: G11C5/06 ,  G11C16/16 ,  G11C7/18 ,  G11C16/30 ,  G11C16/08

Abstract: A nonvolatile memory device includes a first memory block including a plurality of cell transistors interconnected with a plurality of ground selection lines, a plurality of word lines, and a plurality of string selection lines, which are stacked in a direction perpendicular to a substrate, a block selecting circuit that is connected with the plurality of ground selection lines, the plurality of word lines, and the plurality of string selection lines, and provides corresponding driving voltages to the plurality of ground selection lines, the plurality of word lines, and the plurality of string selection lines in response to a block selection signal, respectively, and a block unselecting circuit that is connected only with specific string selection lines of the plurality of string selection lines, and provides an off-voltage only to the specific string selection lines in response to a block un-selection signal.