公开(公告)号：US20160027652A1

公开(公告)日：2016-01-28

申请号：US14678491

申请日：2015-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin JEON ,  Kyung-Sun KIM ,  DOUGYONG SUNG ,  Tae-Hwa KIM ,  Heungsik PARK ,  Jung Min KIM

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11582

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

公开(公告)号：US20180182600A1

公开(公告)日：2018-06-28

申请号：US15826665

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： MinKyu SOHN ,  DOUGYONG SUNG ,  SeungBo SHIM ,  JaeWon JEONG ,  PETER BYUNGHOON HAN

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32146 ,  H01J37/32972 ,  H01J2237/327 ,  H01J2237/3347 ,  H01L21/67069 ,  H01L21/67253

Abstract: A plasma system includes an electrode and an RF power supply unit supplying an RF power to the electrode to generate a plasma on the electrode. The RF power is provided in a pulse having a valley-shaped portion during an on-pulsing interval of the pulse. The valley-shaped portion is defined by a valley angle and a valley width. By controlling the valley angle and the valley width, the plasma may control the etching of a substrate.

公开(公告)号：US20220020597A1

公开(公告)日：2022-01-20

申请号：US17370705

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： KYUHO KIM ,  Nam Kyun KIM ,  Sungjun ANN ,  MYUNGSUN CHOI ,  DOUGYONG SUNG ,  SEUNGBO SHIM

IPC: H01L21/311 ,  H01L21/683 ,  H01J37/32

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.

公开(公告)号：US20210147982A1

公开(公告)日：2021-05-20

申请号：US17159244

申请日：2021-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINKYU SUNG ,  SUNG-KI LEE ,  DOUGYONG SUNG ,  SANG-HO LEE ,  KANGMIN JEON

IPC: C23C16/455 ,  H01L21/683 ,  H01J37/32 ,  C23C16/509

Abstract: A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.

公开(公告)号：US20200168443A1

公开(公告)日：2020-05-28

申请号：US16445423

申请日：2019-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEJIN OH ,  KYOHYEOK KIM ,  JONGWOO SUN ,  DOUGYONG SUNG ,  SUNG-KI LEE ,  JAEHYUN LEE

IPC: H01J37/32 ,  H01J37/22 ,  G01N21/94 ,  H01L21/66 ,  H01L21/3065

Abstract: A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light

公开(公告)号：US20200157682A1

公开(公告)日：2020-05-21

申请号：US16509946

申请日：2019-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINKYU SUNG ,  SUNG-KI LEE ,  DOUGYONG SUNG ,  SANG-HO LEE ,  KANGMIN JEON

IPC: C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  H01L21/683

Abstract: A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.

公开(公告)号：US20180174802A1

公开(公告)日：2018-06-21

申请号：US15804304

申请日：2017-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungkyu LIM ,  DOUGYONG SUNG ,  Myoung Soo PARK ,  Jaehoon KIM ,  Eunyoung LEE ,  Seiwon CHUNG ,  YOSHIHISA HIRANO

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32119 ,  H01J37/3211 ,  H01J37/32183 ,  H01J37/32642 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

Abstract: A dielectric window, a plasma system including the same, a method of fabricating the same, and a method of manufacturing a semiconductor device are provided. The method of manufacturing the semiconductor device may include steps of providing a substrate in a plasma chamber, performing a plasma treatment on a surface of the substrate, and removing the substrate from the plasma chamber, wherein the plasma chamber comprises the dielectric window. The dielectric window may include a dielectric material disk with at least one void, a filler filled in the void to allow the dielectric material disk to have a flat surface, and a passivation layer provided on the filler and the dielectric material disk.

公开(公告)号：US20160203996A1

公开(公告)日：2016-07-14

申请号：US15074290

申请日：2016-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KANGMIN JEON ,  KYUNG-SUN KIM ,  DOUGYONG SUNG ,  TAE-HWA KIM ,  HEUNGSIK PARK ,  JUNG MIN KIM

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11582

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract translation: 提供了一种基板制造方法和用于其的基板制造装置。 衬底制造方法包括将具有掩模膜的衬底提供到腔室中。 在室中诱导等离子体反应。 交替地将第一气体和第二气体提供到腔室中以蚀刻衬底。 第一和第二气体中的每一个以包括方波形状的压力波动分布的稳定的进料压力被提供到室中。