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1.
公开(公告)号:US20200168443A1
公开(公告)日:2020-05-28
申请号:US16445423
申请日:2019-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: SEJIN OH , KYOHYEOK KIM , JONGWOO SUN , DOUGYONG SUNG , SUNG-KI LEE , JAEHYUN LEE
IPC: H01J37/32 , H01J37/22 , G01N21/94 , H01L21/66 , H01L21/3065
Abstract: A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light
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公开(公告)号:US20220199374A1
公开(公告)日:2022-06-23
申请号:US17372131
申请日:2021-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: SEJIN OH , TAEMIN EARMME , EUNWOO LEE , JONGWOO SUN
IPC: H01J37/32 , H01J37/244 , H01L21/66
Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.
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