公开(公告)号：US20200168443A1

公开(公告)日：2020-05-28

申请号：US16445423

申请日：2019-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEJIN OH ,  KYOHYEOK KIM ,  JONGWOO SUN ,  DOUGYONG SUNG ,  SUNG-KI LEE ,  JAEHYUN LEE

IPC: H01J37/32 ,  H01J37/22 ,  G01N21/94 ,  H01L21/66 ,  H01L21/3065

Abstract: A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light

公开(公告)号：US20220199374A1

公开(公告)日：2022-06-23

申请号：US17372131

申请日：2021-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEJIN OH ,  TAEMIN EARMME ,  EUNWOO LEE ,  JONGWOO SUN

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/66

Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.