公开(公告)号：US20250160008A1

公开(公告)日：2025-05-15

申请号：US18818187

申请日：2024-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngzoon YOON ,  Chanwook Baik ,  Kyungsang Cho

IPC: H01L27/146 ,  G01J1/44 ,  G01J5/10

Abstract: A germanium-based short wavelength infrared sensor, a method of manufacturing the same, and an electronic apparatus including the germanium-based short wavelength infrared sensor are provided. The short wavelength infrared sensor according to an example embodiment includes a light absorption layer provided on the substrate layer and having a higher absorption rate for a short wavelength infrared light than an absorption rate for a visible light; a light absorption enhancement layer provided on the light absorption layer to enhance a light absorption rate of the light absorption layer, the light absorption enhancement layer including a plurality of nanostructures; and an upper insulating layer covering the plurality of nanostructures and having a refractive index greater than a refractive index of each of the plurality of nanostructures, wherein the light absorption layer includes germanium (Ge).

公开(公告)号：US12166052B2

公开(公告)日：2024-12-10

申请号：US17580145

申请日：2022-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungsang Cho ,  Hojung Kim ,  Chanwook Baik ,  Yooseong Yang

IPC: H01L27/146 ,  B82Y20/00

Abstract: Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.

公开(公告)号：US11862743B2

公开(公告)日：2024-01-02

申请号：US17459686

申请日：2021-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chanwook Baik ,  Kyungsang Cho ,  Hojung Kim ,  Yooseong Yang

IPC: H01L31/0384 ,  H01L31/112 ,  H01L31/113 ,  H01L31/0216 ,  H01L27/146 ,  H01L31/0336

CPC classification number: H01L31/03845 ,  H01L27/14643 ,  H01L27/14679 ,  H01L31/02161 ,  H01L31/1126 ,  H01L31/1136 ,  H01L31/0336

Abstract: An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.

公开(公告)号：US11692875B2

公开(公告)日：2023-07-04

申请号：US17824569

申请日：2022-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chanwook Baik

IPC: G01J3/26 ,  G01J3/02 ,  G01J3/45 ,  G02B5/28 ,  G02B5/20

CPC classification number: G01J3/26 ,  G01J3/021 ,  G01J3/45 ,  G02B5/284 ,  G02B5/207 ,  G02B2207/101

Abstract: An optical filter, a spectrometer including the optical filter, and an electronic apparatus including the optical filter are disclosed. The optical filter includes a first reflector including a plurality of first structures that are periodically two-dimensionally arranged, each of the first structures having a ring shape, and a second reflector spaced apart from the first reflector and including a plurality of second structures that are periodically two-dimensionally arranged.

公开(公告)号：US20210376190A1

公开(公告)日：2021-12-02

申请号：US17036962

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hojung Kim ,  Chanwook Baik ,  Kyungsang Cho

IPC: H01L33/06 ,  H01L33/62 ,  H01L33/42 ,  H01L33/38

Abstract: Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer.

公开(公告)号：US10601140B2

公开(公告)日：2020-03-24

申请号：US15875526

申请日：2018-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Chanwook Baik ,  Payam Heydari ,  Peyman Nazari

IPC: H01Q13/18 ,  H03F3/19 ,  H01Q3/44 ,  H01Q21/20 ,  H03F3/60 ,  H01Q13/12 ,  H01P5/00

Abstract: An electromagnetic wave radiator may include: a first metal layer; a plurality of metal side walls vertically protruding along an edge of the first metal layer; and a second metal layer suspended over the first metal layer. The second metal layer includes a plurality of ports radially extending from edges of the second metal layer and a plurality of slots penetrating the second metal layer in a radial direction.

公开(公告)号：US11817625B2

公开(公告)日：2023-11-14

申请号：US17708963

申请日：2022-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Chanwook Baik ,  Payam Heydari ,  Peyman Nazari

IPC: H01Q13/18 ,  H01Q3/44 ,  H01Q13/12 ,  H01Q21/20 ,  H03F3/19 ,  H03F3/60 ,  H01Q3/34 ,  H01P5/00

CPC classification number: H01Q13/18 ,  H01Q3/34 ,  H01Q3/443 ,  H01Q13/12 ,  H01Q21/205 ,  H03F3/19 ,  H03F3/60 ,  H01P5/00 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/451

Abstract: An electromagnetic wave radiator may include: a first metal layer; a plurality of metal side walls vertically protruding along an edge of the first metal layer; and a second metal layer suspended over the first metal layer. The second metal layer includes a plurality of ports radially extending from edges of the second metal layer and a plurality of slots penetrating the second metal layer in a radial direction.

公开(公告)号：US11670665B2

公开(公告)日：2023-06-06

申请号：US16919328

申请日：2020-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungsang Cho ,  Hojung Kim ,  Chanwook Baik

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/112

CPC classification number: H01L27/14679 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14612 ,  H01L27/14683 ,  H01L31/035218 ,  H01L31/1129

Abstract: Provided are opto-electronic devices with low dark noise and high signal-to-noise ratio and methods of manufacturing the same. An opto-electronic device may include: a semiconductor substrate; a light receiving unit formed in the semiconductor substrate; and a driving circuit arranged on a surface of the semiconductor substrate. The light receiving unit may include: a first semiconductor layer partially arranged in an upper region of the semiconductor substrate and doped with a first conductivity type impurity; a second semiconductor layer arranged on the first semiconductor layer and doped with a second conductivity type impurity; a transparent matrix layer arranged on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to contact the transparent matrix layer; and a first electrode and a second electrode electrically connected to the second semiconductor layer and respectively arranged on both sides of the transparent matrix layer.

公开(公告)号：US11646393B2

公开(公告)日：2023-05-09

申请号：US17036962

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hojung Kim ,  Chanwook Baik ,  Kyungsang Cho

IPC: H01L33/06 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L33/387 ,  H01L33/42 ,  H01L33/62

Abstract: Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer.

公开(公告)号：US10317696B2

公开(公告)日：2019-06-11

申请号：US15379662

申请日：2016-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejeong Jeong ,  Chanwook Baik ,  Changwon Lee

IPC: G02B21/00 ,  G02B27/58 ,  G02B3/08 ,  G02B5/18 ,  G02B1/02 ,  G02B21/02

Abstract: Electromagnetic wave focusing devices and optical apparatuses including the same are provided. An electromagnetic wave focusing device may include a plurality of material members located at different distances from a reference point. The intervals and/or widths of the material members may vary with distance from the reference point. For example, the intervals and/or widths of the material members may increase or decrease with distance from the reference point. The intervals and/or widths of the material members may be controlled to satisfy a spatial coherence condition with the electromagnetic wave.