公开(公告)号：US11856773B2

公开(公告)日：2023-12-26

申请号：US17176398

申请日：2021-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujin Seo ,  Euntaek Jung ,  Byoungil Lee ,  Seul Lee ,  Joonhee Lee ,  Changdae Jung ,  Bonghyun Choi ,  Sejie Takaki

IPC: H01L27/11582 ,  H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/40 ,  H10B43/10 ,  H10B43/40

CPC classification number: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/40 ,  H10B43/10 ,  H10B43/40

Abstract: A semiconductor device includes a pattern structure; a stack structure including gate and interlayer insulating layers on the pattern structure; and vertical structures penetrating through the stack structure, contacting the pattern structure. The pattern structure includes a lower pattern layer, an intermediate pattern layer, and an upper pattern layer sequentially stacked, the vertical structures including a vertical memory structure penetrating through the upper pattern and intermediate pattern layers and extending into the lower pattern layer, the intermediate pattern layer including a first portion, a second portion extending from the first portion and having a decreased thickness, and a third portion extending from the first portion, having an increased thickness, and contacting the vertical memory structure. The second portion of the intermediate pattern layer has a side surface that is lowered while forming a surface curved from an upper surface of the first portion and that contacts the upper pattern layer.

公开(公告)号：US20210375920A1

公开(公告)日：2021-12-02

申请号：US17176398

申请日：2021-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujin Seo ,  Euntaek Jung ,  Byoungil Lee ,  Seul Lee ,  Joonhee Lee ,  Changdae Jung ,  Bonghyun Choi ,  Sejie Takaki

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11565 ,  H01L27/11526 ,  H01L27/11519

Abstract: A semiconductor device includes a pattern structure; a stack structure including gate and interlayer insulating layers on the pattern structure; and vertical structures penetrating through the stack structure, contacting the pattern structure. The pattern structure includes a lower pattern layer, an intermediate pattern layer, and an upper pattern layer sequentially stacked, the vertical structures including a vertical memory structure penetrating through the upper pattern and intermediate pattern layers and extending into the lower pattern layer, the intermediate pattern layer including a first portion, a second portion extending from the first portion and having a decreased thickness, and a third portion extending from the first portion, having an increased thickness, and contacting the vertical memory structure. The second portion of the intermediate pattern layer has a side surface that is lowered while forming a surface curved from an upper surface of the first portion and that contacts the upper pattern layer.

公开(公告)号：US11210827B2

公开(公告)日：2021-12-28

申请号：US16253624

申请日：2019-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoyoung Lee ,  Gyuchual Kim ,  Changdae Jung ,  Kwangseong Choi ,  Hosup Choi

IPC: G06T11/60 ,  G06F40/30 ,  G06F40/279

Abstract: An electronic device comprises an input device comprising input circuitry, a display device, a communication circuit, and at least one processor configured to control the electronic device to: receive a text through the input device, transmit first information about the text to a server, control the communication circuit to receive second information associated with an image identified based on an emotional state of a first user, the emotional state of the first user being identified as a result of analysis of the text by a learning model trained using a database for a plurality of texts and a plurality of types of emotion and degrees of emotion and an emotional state of a second user conversing with the first user, and display the image based on the second information associated with the image.