公开(公告)号：US10714618B2

公开(公告)日：2020-07-14

申请号：US16129935

申请日：2018-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geum-jung Seong ,  Bo-ra Lim ,  Jeong-yun Lee ,  Ah-reum Ji

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L27/088 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region pattern that protrudes from a top surface of the device isolation layer pattern, and a source/drain region in contact with a top surface of the fin active region pattern and a top surface of the spacer pattern.

公开(公告)号：US10573729B2

公开(公告)日：2020-02-25

申请号：US16417973

申请日：2019-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Namkyu Cho ,  Bo-ra Lim ,  Geum-jung Seong ,  Seung-hun Lee

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/308 ,  H01L29/78 ,  H01L21/02 ,  H01L29/08 ,  H01L27/092 ,  H01L27/11 ,  H01L27/10 ,  H01L29/165

Abstract: An integrated circuit device includes: a first fin active region extending in a first direction parallel to a top surface of a substrate; a second fin active region extending in the first direction and spaced apart from the first fin active region in a second direction different from the first direction; a gate line intersecting the first and second fin active regions; a first source/drain region on one side of the gate line in the first fin active region; and a second source/drain region on one side of the gate line in the second fin active region and facing the first source/drain region, wherein a cross-section of the first source/drain region perpendicular to the first direction has an asymmetric shape with respect to a center line of the first source/drain region in the second direction extending in a third direction perpendicular to the top surface of the substrate.

公开(公告)号：US10522616B2

公开(公告)日：2019-12-31

申请号：US15823961

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Nam-kyu Cho ,  Tae-soon Kwon ,  Bo-ra Lim ,  Jeong-yun Lee

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet.

公开(公告)号：US10319841B2

公开(公告)日：2019-06-11

申请号：US15870549

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Namkyu Cho ,  Bo-ra Lim ,  Geum-jung Seong ,  Seung-hun Lee

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/308 ,  H01L21/02 ,  H01L29/78 ,  H01L29/08

Abstract: An integrated circuit device includes: a first fin active region extending in a first direction parallel to a top surface of a substrate; a second fin active region extending in the first direction and spaced apart from the first fin active region in a second direction different from the first direction; a gate line intersecting the first and second fin active regions; a first source/drain region on one side of the gate line in the first fin active region; and a second source/drain region on one side of the gate line in the second fin active region and facing the first source/drain region, wherein a cross-section of the first source/drain region perpendicular to the first direction has an asymmetric shape with respect to a center line of the first source/drain region in the second direction extending in a third direction perpendicular to the top surface of the substrate.

公开(公告)号：US20180294331A1

公开(公告)日：2018-10-11

申请号：US15823961

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Nam-kyu Cho ,  Tae-soon Kwon ,  Bo-ra Lim ,  Jeong-yun Lee

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0607 ,  B82Y10/00 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/41725 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7831 ,  H01L29/785 ,  H01L29/78618 ,  H01L29/78696 ,  H01L2029/7858

Abstract: A semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet.