公开(公告)号：US10522616B2

公开(公告)日：2019-12-31

申请号：US15823961

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Nam-kyu Cho ,  Tae-soon Kwon ,  Bo-ra Lim ,  Jeong-yun Lee

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet.

公开(公告)号：US20180294331A1

公开(公告)日：2018-10-11

申请号：US15823961

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Nam-kyu Cho ,  Tae-soon Kwon ,  Bo-ra Lim ,  Jeong-yun Lee

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0607 ,  B82Y10/00 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/41725 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7831 ,  H01L29/785 ,  H01L29/78618 ,  H01L29/78696 ,  H01L2029/7858

Abstract: A semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet.