公开(公告)号：US20160005738A1

公开(公告)日：2016-01-07

申请号：US14716822

申请日：2015-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bin LIU ,  Sung-min KIM

IPC: H01L27/092

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823892 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device is provided. In some examples, the semiconductor device includes: a substrate, a fin structure disposed with the substrate, a source and a drain that are formed in the fin structure, a channel area disposed between the source and the drain, a gate dielectric layer disposed on the channel area, and a gate line disposed on the gate dielectric layer. The fin structure may include an anti-punch through layer, an upper fin structure disposed on the anti-punch through layer, the upper fin structure including a material having a lattice constant to receive a compressive strain. The fin structure may also include a lower fin structure disposed under the anti-punch through layer, and may comprise the same material as the substrate.

Abstract translation: 提供半导体器件。 在一些示例中，半导体器件包括：衬底，布置在衬底上的鳍结构，形成在鳍结构中的源极和漏极，设置在源极和漏极之间的沟道区，栅介质层，设置在 沟道区域和设置在栅极介电层上的栅极线。 翅片结构可以包括抗穿通层，设置在抗穿通层上的上翅片结构，上翅片结构包括具有接收压缩应变的晶格常数的材料。 翅片结构还可以包括设置在抗穿通层下方的下翅片结构，并且可以包括与基底相同的材料。

公开(公告)号：US20160049335A1

公开(公告)日：2016-02-18

申请号：US14822077

申请日：2015-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bin LIU ,  Sungmin KIM

IPC: H01L21/8234

CPC classification number: H01L21/823431 ,  H01L21/823412 ,  H01L21/823814 ,  H01L21/823821

Abstract: Methods for manufacturing a semiconductor device including a field effect transistor include forming first fins protruding from a substrate including a first region and a second region, the first fins including silicon-germanium (SiGe), forming a first mask pattern to expose the first fins disposed in the second region, the first mask pattern covering the first fins disposed in the first region, oxidizing the first fins in the second region to form second fins in the second region, and forming germanium (Ge)-rich layers each disposed on a surface of a respective one of the second fins.

Abstract translation: 制造包括场效应晶体管的半导体器件的方法包括形成从包括第一区域和第二区域的衬底突出的第一鳍片，所述第一鳍片包括硅 - 锗（SiGe），形成第一掩模图案以暴露设置的第一鳍片 在第二区域中，覆盖设置在第一区域中的第一鳍片的第一掩模图案，在第二区域中氧化第一鳍片以在第二区域中形成第二鳍片，并且形成各自设置在表面上的锗（Ge） 的第二鳍片中的相应一个。