公开(公告)号：US20140159181A1

公开(公告)日：2014-06-12

申请号：US14102965

申请日：2013-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-min KIM ,  Dae-Jun KANG ,  Seung-nam CHA ,  Muhammad Imran SHAKIR ,  Young-jun PARK

IPC: B01J35/00 ,  H01L31/028 ,  B01J23/52

CPC classification number: B01J35/004 ,  B01J21/18 ,  B01J23/52 ,  B01J35/0013 ,  B01J35/0033 ,  B01J35/006 ,  H01L31/028 ,  Y02E10/547

Abstract: A graphene-nanoparticle structure includes a substrate, a graphene layer disposed on the substrate and a nanoparticle layer disposed on the graphene layer. The graphene-nanoparticle structure may be formed by alternately laminating the graphene layer and the nanoparticle layer and may play the role of a multifunctional film capable of realizing various functions according to the number of laminated layers and the selected material of the nanoparticles.

Abstract translation: 石墨烯纳米颗粒结构包括基底，设置在基底上的石墨烯层和设置在石墨烯层上的纳米颗粒层。 可以通过交替层叠石墨烯层和纳米颗粒层来形成石墨烯纳米颗粒结构，并且可以起到根据叠层数和纳米颗粒的选定材料实现各种功能的多功能膜的作用。

公开(公告)号：US20160155930A1

公开(公告)日：2016-06-02

申请号：US15015948

申请日：2016-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-inn SOHN ,  Seung-nam CHA ,  Sung-min KIM ,  Sang-woo KIM ,  Ju-seok SEO

IPC: H01L41/45 ,  H02N11/00

CPC classification number: H01L41/45 ,  H01L41/1136 ,  H01L41/193 ,  H02N2/18 ,  H02N11/002 ,  Y10T29/42

Abstract: A nanogenerator with at least one nanostructure and method of manufacturing the same are provided. The method of manufacturing the nanogenerator includes forming at least one nanostructure including an organic piezoelectric material on a substrate.

Abstract translation: 提供具有至少一种纳米结构的纳米发生器及其制造方法。 制造纳米发生器的方法包括在衬底上形成包括有机压电材料的至少一个纳米结构。

公开(公告)号：US20160005738A1

公开(公告)日：2016-01-07

申请号：US14716822

申请日：2015-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bin LIU ,  Sung-min KIM

IPC: H01L27/092

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823892 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device is provided. In some examples, the semiconductor device includes: a substrate, a fin structure disposed with the substrate, a source and a drain that are formed in the fin structure, a channel area disposed between the source and the drain, a gate dielectric layer disposed on the channel area, and a gate line disposed on the gate dielectric layer. The fin structure may include an anti-punch through layer, an upper fin structure disposed on the anti-punch through layer, the upper fin structure including a material having a lattice constant to receive a compressive strain. The fin structure may also include a lower fin structure disposed under the anti-punch through layer, and may comprise the same material as the substrate.

Abstract translation: 提供半导体器件。 在一些示例中，半导体器件包括：衬底，布置在衬底上的鳍结构，形成在鳍结构中的源极和漏极，设置在源极和漏极之间的沟道区，栅介质层，设置在 沟道区域和设置在栅极介电层上的栅极线。 翅片结构可以包括抗穿通层，设置在抗穿通层上的上翅片结构，上翅片结构包括具有接收压缩应变的晶格常数的材料。 翅片结构还可以包括设置在抗穿通层下方的下翅片结构，并且可以包括与基底相同的材料。