公开(公告)号：US20160376698A1

公开(公告)日：2016-12-29

申请号：US15261629

申请日：2016-09-09

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Suk LEE ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Jeong-Ho YI ,  Mi-Ra AN

IPC: C23C14/54

CPC classification number: C23C14/543 ,  B05D1/60 ,  C23C14/12 ,  C23C14/246 ,  C23C14/544 ,  C23C16/4481

Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

Abstract translation: 公开了一种单体蒸发装置及其控制方法。 单体蒸发装置包括：第一蒸发器和第二蒸发器，其分别接收吹扫气体并蒸发第一单体和第二单体; 第一流管和第二流管，其连接到相应的蒸发器并允许由各蒸发器蒸发的第一单体和第二单体流过其中; 过渡管，其连接到所述第一流管和所述第二流管，并且将至少一个所述第一单体和所述第二单体供应到沉积室; 以及调节单体流入沉积室的控制阀装置。 该装置有助于将单体平滑且不间断地应用于沉积室的内部。

公开(公告)号：US20190256978A1

公开(公告)日：2019-08-22

申请号：US16404223

申请日：2019-05-06

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Suk LEE ,  Suk-Won JUNG ,  Myung-Soo HUH ,  Mi-Ra AN

IPC: C23C16/46 ,  H01J37/32 ,  C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52 ,  C23C16/509

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

公开(公告)号：US20170218508A1

公开(公告)日：2017-08-03

申请号：US15492941

申请日：2017-04-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Jeong-Ho YI ,  Sang-Hyuk HONG ,  Yong-Suk LEE

IPC: C23C16/04 ,  H01L51/00 ,  C23C16/52 ,  C23C16/50 ,  C23C16/44 ,  H01L51/56 ,  C23C16/458

CPC classification number: C23C16/042 ,  C23C16/4405 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/52 ,  H01L21/681 ,  H01L21/682 ,  H01L21/68735 ,  H01L21/68742 ,  H01L27/3244 ,  H01L51/0012 ,  H01L51/56

Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.

公开(公告)号：US20150110974A1

公开(公告)日：2015-04-23

申请号：US14445951

申请日：2014-07-29

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Suk LEE ,  Suk-Won Jung ,  Myung-Soo Huh ,  Mi-Ra An

IPC: C23C16/46 ,  C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/509 ,  C23C16/40

CPC classification number: C23C16/46 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/67109 ,  H01L21/67248

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

Abstract translation: 一种等离子体处理装置，包括：室，被配置为提供用于处理基板的空间; 衬底台，被配置为在所述腔室内支撑所述衬底并且包括第一电极，所述第一电极被配置为接收第一射频信号; 第二电极，设置在所述室的上部以面对所述第一电极，所述第二电极被配置为接收第二射频信号; 气体供给单元，其构造成将处理气体供给到所述室内的所述基板上; 以及热控制单元，其被配置为使传热介质循环通过设置在第一电极中的第一流体通道和设置在第二电极中的第二流体通道，以将第一和第二电极保持在相同的温度。

公开(公告)号：US20220375717A1

公开(公告)日：2022-11-24

申请号：US17668369

申请日：2022-02-09

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Suk LEE ,  Suk-Won JUNG ,  Myung-Soo HUH ,  Mi-Ra AN

IPC: H01J37/32 ,  H01L51/52 ,  C23C16/505

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

公开(公告)号：US20150047969A1

公开(公告)日：2015-02-19

申请号：US14296826

申请日：2014-06-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Suk LEE ,  Min-Sung SEO ,  Myung-Soo HUH ,  Mi-Ra AN

IPC: H01L51/56

CPC classification number: C23C14/568 ,  C23C16/54 ,  H01L21/67184 ,  H01L21/67207 ,  H01L51/5256

Abstract: A thin film encapsulation layer manufacturing apparatus is provided that may include a transfer chamber, a sputtering chamber, a monomer deposition chamber, a chemical vapor deposition (CVD) chamber, and an atomic layer deposition (ALD) chamber. The transfer chamber may be connected to each of the other chambers, and may be configured to align a substrate. Each of the other chambers may be configured to receive from and transfer to the transfer chamber a substrate. The sputtering chamber may be configured to form a first inorganic layer on the substrate by a sputtering process. The monomer deposition chamber may be configured to deposit a first organic layer on the first inorganic layer. The CVD chamber may be configured to form a second inorganic layer on the first organic layer. The ALD chamber may be configured to form a third inorganic layer on the second inorganic layer.

Abstract translation: 提供一种薄膜封装层制造装置，其可以包括转移室，溅射室，单体沉积室，化学气相沉积（CVD）室和原子层沉积（ALD）室。 传送室可以连接到每个其它室，并且可以被配置为对准衬底。 每个其它室可以被配置为从转移室接收和转移到基板。 溅射室可以被配置为通过溅射工艺在衬底上形成第一无机层。 单体沉积室可以被配置为在第一无机层上沉积第一有机层。 CVD室可以被配置为在第一有机层上形成第二无机层。 ALD室可以被配置成在第二无机层上形成第三无机层。

公开(公告)号：US20140162385A1

公开(公告)日：2014-06-12

申请号：US14020849

申请日：2013-09-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Jeong-Ho YI ,  Sang-Hyuk HONG ,  Yong-Suk LEE

IPC: H01L27/32

CPC classification number: C23C16/042 ,  C23C16/4405 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/52 ,  H01L21/681 ,  H01L21/682 ,  H01L21/68735 ,  H01L21/68742 ,  H01L27/3244 ,  H01L51/0012 ,  H01L51/56

Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.

Abstract translation: 一种用于通过使用相对于基板的掩模进行沉积处理的沉积装置，所述沉积装置包括室，所述室中的支撑单元，所述支撑单元包括第一孔并被构造成支撑所述基板，所述供给单元构造成 向衬底提供至少一个沉积原材料，以及通过支撑单元的第一孔的可移动对准单元，对准单元构造成支撑掩模并使掩模相对于衬底对准。