公开(公告)号：US20210399074A1

公开(公告)日：2021-12-23

申请号：US17287936

申请日：2019-02-20

Applicant: Samsung Display Co., Ltd.

Inventor： Yeonkeon MOON ,  Joonseok PARK ,  Kwang-suk KIM ,  Myounghwa KIM ,  Taesang KIM ,  Geunchul PARK ,  Kyungjin JEON

IPC: H01L27/32 ,  H01L29/786

Abstract: A transistor substrate may include a substrate including a first region and a second region, a first buffer layer disposed in the first region on the substrate and including silicon nitride, a second buffer layer disposed in the first region and the second region on the first buffer layer and including silicon oxide, a first transistor disposed in the first region on the second buffer layer and including a first oxide semiconductor layer and a first gate electrode overlapping the first oxide semiconductor layer, and a second transistor disposed in the second region on the second buffer layer and including a second oxide semiconductor layer and a second gate electrode overlapping the second oxide semiconductor layer.

公开(公告)号：US20200220021A1

公开(公告)日：2020-07-09

申请号：US16819496

申请日：2020-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20220238720A1

公开(公告)日：2022-07-28

申请号：US17722611

申请日：2022-04-18

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20210408292A1

公开(公告)日：2021-12-30

申请号：US17158824

申请日：2021-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo SOHN ,  Yeonkeon MOON ,  Myounghwa KIM ,  Taesang KIM ,  Geunchul PARK ,  Joonseok PARK ,  Junhyung LIM ,  Hyelim CHOI

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/32

Abstract: A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.

公开(公告)号：US20210391406A1

公开(公告)日：2021-12-16

申请号：US17152249

申请日：2021-01-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hyelim CHOI ,  Joonseok PARK ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON ,  Geunchul PARK ,  Sangwoo SOHN ,  Junhyung LIM

IPC: H01L27/32

Abstract: A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.

公开(公告)号：US20190074377A1

公开(公告)日：2019-03-07

申请号：US16108454

申请日：2018-08-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L27/32

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.