公开(公告)号：US20140145178A1

公开(公告)日：2014-05-29

申请号：US13838219

申请日：2013-03-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YONG-SU LEE ,  Su-Hyoung Kang ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.

Abstract translation: 开关元件包括有源图形，其包括沟道部分，连接到沟道部分的源极部分和连接到沟道部分的漏极部分，源极部分，与有源图案的沟道部分重叠的栅极电极，栅极绝缘层 设置在有源图案的沟道部分和栅电极之间的层，设置在有源图案的源极部分上以与源极部分欧姆接触的源电极以及设置在有源图案的漏极部分上的漏电极， 与漏极部分欧姆接触。 有源图案的漏极部分和沟道部分包括相同或基本上相同的材料。

公开(公告)号：US20220205110A1

公开(公告)日：2022-06-30

申请号：US17566427

申请日：2021-12-30

Applicant: Samsung Display Co., Ltd.

Inventor： BONG-KYUN KIM ,  CHANGWOO KWON ,  SEUNGBO SHIM ,  ILBAE AHN ,  SEOKJUN JANG ,  JINSUEK KIM ,  JI-HUN PARK ,  YONG-SU LEE ,  YANGIL JEON ,  GYU-PO KIM ,  SANG-WOO KIM ,  HYUN-CHEOL SHIN

IPC: C23F1/26 ,  C23F1/18 ,  H01L21/027

Abstract: An etchant composition of an embodiment may etch a multi-layered film of titanium/copper and may include about 5 wt % to about 20 wt % of persulfate, about 0.1 wt % to about 5 wt % of phosphoric acid or phosphate, about 0.01 wt % to about 2 wt % of a carbonyl ring compound, about 0.01 wt % to about 1 wt % of a 3-nitrogen ring compound, about 0.1 wt % to about 2 wt % of a 4-nitrogen ring compound, about 0.1 wt % to about 0.9 wt % of a fluorine compound, about 0.1 wt % to about 0.5 wt % of hydrogen about 1 wt % to about 3 wt % of a zwitterionic compound, and sulfate, water which is included in an amount that makes the total weight of the entire composition about 100 wt %.

公开(公告)号：US20150108481A1

公开(公告)日：2015-04-23

申请号：US14452261

申请日：2014-08-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOON-HO KHANG ,  DONG-JO KIM ,  SU-HYOUNG KANG ,  YONG-SU LEE

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/42

CPC classification number: H01L29/7869 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696

Abstract: A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coincident with each other in a cross-sectional view. The active pattern includes a source portion, a drain portion and a channel portion disposed between the source portion and the drain portion. The channel portion overlaps with the bottom gate electrode and the top gate electrode.

Abstract translation: 薄膜晶体管包括底栅电极，顶栅电极和有源图案。 顶栅电极包括透明导电材料并与底栅电极重叠。 底栅电极的边界和顶栅电极的边界在横截面图中彼此重合。 有源图案包括源极部分，漏极部分和设置在源极部分和漏极部分之间的沟道部分。 沟道部分与底栅电极和顶栅电极重叠。