公开(公告)号：US10579174B2

公开(公告)日：2020-03-03

申请号：US15794829

申请日：2017-10-26

Applicant: Samsung Display Co., Ltd.

Inventor： Kwan Ho Kim ,  Jin Hee Park ,  Ho Seok Son ,  Sung Yeon Cho ,  Jae Hyung Cho ,  Hyun Jae Na

IPC: G06F3/041 ,  G06F3/044 ,  G09G3/3225 ,  H01L51/52 ,  H01L27/32

Abstract: A touch sensor includes a touch sensing column, a touch sensing row, and connectors. The touch sensing column has a plurality of first touch sensing electrodes extending in one direction. The touch sensing row has a plurality of second sensing electrodes extending in a direction intersecting the touch sensing column. The connectors connect adjacent first touch sensing electrodes or adjacent second touch sensing electrodes. Here, at least some of the first touch sensing electrodes or the second touch sensing electrodes include a first region connected to the connectors and having a first line resistance, and a second region adjacent the first region and having a second line resistance. The first line resistance is different from the second line resistance.

公开(公告)号：US09768309B2

公开(公告)日：2017-09-19

申请号：US15194841

申请日：2016-06-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L27/32

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20150348494A1

公开(公告)日：2015-12-03

申请号：US14715490

申请日：2015-05-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji Hun Lim ,  Hyun Jae Na ,  Dong Hwan Shim ,  Byung Du Ahn

IPC: G09G5/00 ,  G09G5/18 ,  G09G3/36

CPC classification number: G09G3/3648 ,  G09G2330/021 ,  G09G2360/144 ,  H01L31/022466

Abstract: A display device includes a first pixel coupled to a first scan line and a first data line. The first pixel includes a switching transistor including a control terminal connected to the first scan line and an input terminal connected to the first data line, and is turned on by an on-scan signal, a first transistor including a first control terminal connected to the first scan line, a first input terminal connected to the first data line, and a first output terminal connected to the first control terminal; and a second transistor including a second control terminal connected to the first output terminal, a second input terminal receiving a base voltage, and a second output terminal connected to the second control terminal. The first and second transistors respectively convert light into first and second currents outputted respectively to the first and second output terminals in response to an off-scan signal.

Abstract translation: 显示装置包括耦合到第一扫描线和第一数据线的第一像素。 第一像素包括开关晶体管，其包括连接到第一扫描线的控制端子和连接到第一数据线的输入端子，并由接通扫描信号导通;第一晶体管，包括连接到第一扫描线的第一控制端子 第一扫描线，连接到第一数据线的第一输入端和连接到第一控制端的第一输出端; 以及第二晶体管，包括连接到第一输出端子的第二控制端子，接收基极电压的第二输入端子和连接到第二控制端子的第二输出端子。 第一和第二晶体管响应于截止扫描信号分别将光转换成分别输出到第一和第二输出端的第一和第二电流。

公开(公告)号：US09034691B2

公开(公告)日：2015-05-19

申请号：US14468472

申请日：2014-08-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/385 ,  H01L21/441

CPC classification number: H01L29/7869 ,  H01L21/0262 ,  H01L21/385 ,  H01L21/441 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78696

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Abstract translation: 提供一种薄膜晶体管，包括该薄膜晶体管的薄膜晶体管阵列面板及其制造方法，其中薄膜晶体管包括沟道区，该沟道区包括氧化物半导体，源极区和连接到沟道的漏极区 区域，并且相对于沟道区域在两侧面对，位于沟道区域上的绝缘层和位于绝缘层上的栅电极，其中栅电极的边缘边界和沟道区域的边缘边界 基本对齐。

公开(公告)号：US20140167040A1

公开(公告)日：2014-06-19

申请号：US14184361

申请日：2014-02-19

Applicant: Samsung Display Co., Ltd.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。 源电极和漏电极彼此面对。 源电极和漏电极分别位于氧化物半导体的两个相对侧。 低导电区域位于源电极或漏电极与氧化物半导体之间。 绝缘层位于氧化物半导体和低导电区域上。 栅电极位于绝缘层上。 绝缘层覆盖氧化物半导体和低导电区域。 低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。

公开(公告)号：US12087865B2

公开(公告)日：2024-09-10

申请号：US18176454

申请日：2023-02-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/1213

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20200233512A1

公开(公告)日：2020-07-23

申请号：US16840891

申请日：2020-04-06

Applicant: Samsung Display Co., Ltd.

Inventor： Gwang Bum KO ,  Hyun Jae Na

IPC: G06F3/044 ,  G06F3/047

Abstract: A touch panel including a sensing cell and a sensing line disposed on a transparent substrate. Each of the sensing cell and the sensing line includes at least one pattern line. The at least one pattern line includes unit patterns, each of the unit patterns including a first line extending in a first direction, a second line connected to the first line and extending in a second direction intersecting the first direction, a third line connected to the first line and extending in a third direction intersecting the first direction, and a fourth line connected to the third line and extending in the first direction. The first line, the second line, the third line, and an extension of the fourth line form a trapezoid. The unit patterns are repeatedly arranged and adjacent unit patterns are connected each other.

公开(公告)号：US09548034B2

公开(公告)日：2017-01-17

申请号：US14715490

申请日：2015-05-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji Hun Lim ,  Hyun Jae Na ,  Dong Hwan Shim ,  Byung Du Ahn

IPC: G09G3/36 ,  H01L31/0224

CPC classification number: G09G3/3648 ,  G09G2330/021 ,  G09G2360/144 ,  H01L31/022466

Abstract: A display device includes a first pixel coupled to a first scan line and a first data line. The first pixel includes a switching transistor including a control terminal connected to the first scan line and an input terminal connected to the first data line, and is turned on by an on-scan signal, a first transistor including a first control terminal connected to the first scan line, a first input terminal connected to the first data line, and a first output terminal connected to the first control terminal; and a second transistor including a second control terminal connected to the first output terminal, a second input terminal receiving a base voltage, and a second output terminal connected to the second control terminal. The first and second transistors respectively convert light into first and second currents outputted respectively to the first and second output terminals in response to an off-scan signal.

Abstract translation: 显示装置包括耦合到第一扫描线和第一数据线的第一像素。 第一像素包括开关晶体管，其包括连接到第一扫描线的控制端子和连接到第一数据线的输入端子，并由接通扫描信号导通;第一晶体管，包括连接到第一扫描线的第一控制端子 第一扫描线，连接到第一数据线的第一输入端和连接到第一控制端的第一输出端; 以及第二晶体管，包括连接到第一输出端子的第二控制端子，接收基极电压的第二输入端子和连接到第二控制端子的第二输出端子。 第一和第二晶体管响应于截止扫描信号分别将光转换成分别输出到第一和第二输出端的第一和第二电流。

公开(公告)号：US09502574B2

公开(公告)日：2016-11-22

申请号：US14249329

申请日：2014-04-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung-Hwan Cho ,  Young Ki Shin ,  Dong Hwan Shim ,  Yoon Ho Khang ,  Hyun Jae Na

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

Abstract: A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source region and drain region formed by doping both sides of the first semiconductor layer and the second semiconductor layer with impurities, and the source region includes a first source layer on the same plane as the first semiconductor layer and a second source layer on the same plane as the second semiconductor layer, and the drain region includes a first drain layer on the same plane as the first semiconductor layer and a second drain layer on the same plane as the second semiconductor layer, and only one of the first semiconductor layer and the second semiconductor layer is a transistor channel layer.

Abstract translation: 薄膜晶体管包括：第一半导体层; 设置在所述第一半导体层上的第二半导体层; 以及通过用杂质掺杂第一半导体层和第二半导体层的两侧而形成的一对源区和漏区，源极区包括与第一半导体层在同一平面上的第一源极层和第二源极层 在与第二半导体层相同的平面上，漏区包括与第一半导体层相同的平面上的第一漏极层和与第二半导体层在同一平面上的第二漏极层，并且仅第一半导体 层，第二半导体层是晶体管沟道层。

公开(公告)号：US09147741B2

公开(公告)日：2015-09-29

申请号：US13892574

申请日：2013-05-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Jae Na ,  Yoon Ho Khang ,  Sang Ho Park ,  Dong Hwan Shim ,  Se Hwan Yu ,  Yong Su Lee ,  Myoung Geun Cha

IPC: H01L21/84 ,  H01L21/20 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/4908 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78633

Abstract: A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管显示面板包括基板，形成在基板上的第一绝缘层，形成在第一绝缘层上的半导体层，形成在半导体层上的第二绝缘层，以及 形成在第二绝缘层上的栅电极，其中第一绝缘层包括遮光材料，第一绝缘层的厚度大于或等于第二绝缘层的厚度。