Method and apparatus for treating substrate

    公开(公告)号:US11000879B2

    公开(公告)日:2021-05-11

    申请号:US15603188

    申请日:2017-05-23

    申请人: SEMES CO., LTD.

    发明人: Byungsun Bang

    摘要: Provided is a method and apparatus for treating a substrate with a liquid. The substrate treating method comprises a pre-treating step for supplying the treatment liquid containing hydrogen fluoride (HF) to the substrate and treating the substrate before the surface modification step and a surface modification step for supplying an alkene-based chemical onto a substrate to change the surface of the substrate to a hydrophobic state. As a result, the surface of the substrate is uniform, and generation of particles can be reduced when the substrate is removed.

    APPARATUS AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20210066077A1

    公开(公告)日:2021-03-04

    申请号:US17004079

    申请日:2020-08-27

    申请人: SEMES CO., LTD.

    IPC分类号: H01L21/02 H01L21/67

    摘要: The inventive concept relates to a method for treating a substrate. In an embodiment, a method for etching a substrate having a silicon nitride layer includes etching the silicon nitride layer by dispensing a first treatment liquid having a set temperature and a set concentration onto the substrate heated to a set temperature, in which a second treatment liquid is additionally dispensed for a set period of time in an overlapping manner while the first treatment liquid is dispensed in the silicon nitride layer etching process.