Abstract:
A method of patterning a block copolymer layer includes: providing a guide pattern on a surface of a substrate, the guide pattern including sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudinal wall perpendicular to the longitudinal direction of the trench; providing a block copolymer layer on the surface of the substrate; and annealing the block copolymer to cause self-assembly of the block copolymer and to direct the same in the trench. The block copolymer has a microphase-separation into anisotropic discrete domains aligned with a period λo in the trench by the annealing.
Abstract:
A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ( n + 1 ) ] 1 3 ≤ r 1 - r 2 W ≤ 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ( n - 1 ) ] 1 3 . Inequation 1