公开(公告)号：US20140346580A1

公开(公告)日：2014-11-27

申请号：US14197588

申请日：2014-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungsam LEE

IPC: H01L27/105

CPC classification number: H01L27/10814 ,  H01L27/0207 ,  H01L27/10823 ,  H01L27/10885 ,  H01L27/10891

Abstract: A semiconductor device includes a plurality of first signal lines crossing a plurality of second signal lines. At least one of the first signal lines has a first end to receive a first voltage and a second end to receive a second voltage. The first and second voltages are applied simultaneously to respective ones of the first and second ends. A difference between the first and second voltages causes joule heating in the at least one first signal line. The joule heating may correct one or more defects in the semiconductor device.

Abstract translation: 半导体器件包括与多条第二信号线交叉的多条第一信号线。 第一信号线中的至少一个具有接收第一电压的第一端和用于接收第二电压的第二端。 第一和第二电压同时施加到第一和第二端中的相应的一个。 第一和第二电压之间的差异导致至少一个第一信号线中的焦耳加热。 焦耳加热可以校正半导体器件中的一个或多个缺陷。

公开(公告)号：US20230225113A1

公开(公告)日：2023-07-13

申请号：US17959634

申请日：2022-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon NA ,  Sungsam LEE ,  Taiuk RIM ,  Byungha KANG ,  Kanghyun KIM

IPC: H01L27/108

CPC classification number: H01L27/10814

Abstract: A semiconductor device includes a substrate including first and second active regions; a bitline structure extending in one direction on the substrate, the bitline structure being electrically connected to the first active region; a storage node contact on a sidewall of the bitline structure, the storage node contact being electrically connected to the second active region; a spacer structure between the bitline structure and the storage node contact; a landing pad on the storage node contact, the landing pad being in contact with a sidewall of the spacer structure; and a capacitor structure electrically connected to the landing pad, wherein the spacer structure includes a first spacer, a second spacer, a third spacer, and a fourth spacer, sequentially stacked on the sidewall of the bitline structure, the second spacer is an air spacer, and the third spacer has a thickness that is less than a thickness of the first spacer.

公开(公告)号：US20170243973A1

公开(公告)日：2017-08-24

申请号：US15391888

申请日：2016-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungsam LEE ,  Junsoo KIM ,  Hyoshin AHN ,  Satoru YAMADA ,  Joohyun JEON ,  MoonYoung JEONG ,  Chunhyung CHUNG ,  Min Hee CHO ,  Kyo-Suk CHAE ,  Eunae CHOI

IPC: H01L29/78 ,  H01L29/04 ,  H01L29/423

CPC classification number: H01L29/7827 ,  H01L28/00 ,  H01L29/045 ,  H01L29/4236

Abstract: A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.