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公开(公告)号：US09209349B2
公开(公告)日：2015-12-08
申请号：US14184171
申请日：2014-02-19
发明人： Kee Won Lee , Jong Uk Seo , Suk Ho Yoon , Keon Hun Lee , Sang Don Lee
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32
摘要： A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.
摘要翻译： 提供一种制造氮化物半导体发光器件的方法。 该方法包括在衬底上生长第一III族氮化物半导体层，第一III族氮化物半导体层具有形成为具有III族极性的III族富集表面的顶表面和底表面 形成为呈现N极性的富N的表面。 该方法还包括选择性地蚀刻第一III族氮化物半导体层的顶表面中的N极区域，在第一III族氮化物半导体层上形成第二III族氮化物半导体层以填充蚀刻的N极区域并形成 包括第一和第二导电型氮化物半导体层的发光结构和在第二III族氮化物半导体层上的有源层。
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公开(公告)号：US11315947B2
公开(公告)日：2022-04-26
申请号：US16890115
申请日：2020-06-02
发明人： Jae Ho Ahn , Sung-Min Hwang , Joon-Sung Lim , Bum Kyu Kang , Sang Don Lee
IPC分类号： H01L27/11582 , H01L27/11524 , H01L27/11565 , H01L27/11519 , H01L27/1157 , H01L27/11556
摘要： A nonvolatile memory device including a mold structure including a plurality of gate electrodes on a substrate, the plurality of gate electrodes including first, second, and third string selection lines sequentially stacked on the substrate; a channel structure that penetrates the mold structure and intersects each of the gate electrodes; a first cutting region that cuts each of the gate electrodes; a second cutting region that is spaced apart from the first cutting region in a first direction and cuts each of the gate electrodes; a first cutting line that cuts the first string selection line between the first cutting region and the second cutting region; a second cutting line that cuts the second string selection line between the first cutting region and the second cutting region; and a third cutting line that cuts the third string selection line between the first cutting region and the second cutting region.
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公开(公告)号：US09698304B2
公开(公告)日：2017-07-04
申请号：US14979869
申请日：2015-12-28
发明人： Chul Min Kim , Tan Sakong , Suk Ho Yoon , Keon Hun Lee , Do Young Rhee , Sang Don Lee
CPC分类号： H01L33/145 , H01L25/167 , H01L33/06 , H01L33/32 , H01L2224/32225 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H05B33/0872 , H01L2924/00012 , H01L2924/00
摘要： A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.
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4.发明授权Method for fabricating nitride semiconductor thin film and method for fabricating nitride semiconductor device using the same 有权氮化物半导体薄膜的制造方法及使用其的氮化物半导体器件的制造方法公开(公告)号：US09299561B2
公开(公告)日：2016-03-29
申请号：US14250070
申请日：2014-04-10
发明人： Keon Hun Lee , Min Ho Kim , Jong Uk Seo , Suk Ho Yoon , Kee Won Lee , Sang Don Lee , Ho Chul Lee
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02576 , H01L21/02658 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/22
摘要： A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.
摘要翻译： 制造氮化物半导体薄膜的方法包括制备掺杂有n型杂质的第一氮化物单晶层。 通过向其施加蚀刻气体，在第一氮化物单晶层的表面上形成多个蚀刻坑。 在其上形成有蚀刻坑的第一氮化物单晶层上生长第二氮化物单晶层。
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公开(公告)号：US09252327B1
公开(公告)日：2016-02-02
申请号：US14698575
申请日：2015-04-28
发明人： Chul Min Kim , Tan Sakong , Suk Ho Yoon , Keon Hun Lee , Do Young Rhee , Sang Don Lee
IPC分类号： H01L29/207 , H01L33/14 , H01L33/32 , H01L33/46
CPC分类号： H01L33/145 , H01L25/167 , H01L33/06 , H01L33/32 , H01L2224/32225 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H05B33/0872 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor light emitting device may include: a first conductivity type semiconductor layer; an active layer disposed on the first conductivity type semiconductor layer; an electron-blocking layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron-blocking layer; and a hole-diffusion layer disposed between the electron-blocking layer and the second conductivity type semiconductor layer. The hole-diffusion layer may include three layers having different energy band gaps and different resistance levels and at least one of the three layers may contain Al. A composition of the Al may be lower in the at least one layer than in the electron-blocking layer.
摘要翻译： 半导体发光器件可以包括：第一导电类型半导体层; 设置在所述第一导电类型半导体层上的有源层; 设置在有源层上的电子阻挡层; 设置在电子阻挡层上的第二导电类型半导体层; 以及设置在电子阻挡层和第二导电类型半导体层之间的空穴扩散层。 空穴扩散层可以包括具有不同能带隙和不同电阻水平的三层，三层中的至少一层可以含有Al。 所述Al的组成在所述至少一层中比在所述电子阻挡层中低。
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