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发明授权
US09299561B2 Method for fabricating nitride semiconductor thin film and method for fabricating nitride semiconductor device using the same 有权
氮化物半导体薄膜的制造方法及使用其的氮化物半导体器件的制造方法

Method for fabricating nitride semiconductor thin film and method for fabricating nitride semiconductor device using the same
摘要：
A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.
摘要（中）：

制造氮化物半导体薄膜的方法包括制备掺杂有n型杂质的第一氮化物单晶层。 通过向其施加蚀刻气体，在第一氮化物单晶层的表面上形成多个蚀刻坑。 在其上形成有蚀刻坑的第一氮化物单晶层上生长第二氮化物单晶层。

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