公开(公告)号：US09147454B2

公开(公告)日：2015-09-29

申请号：US13792440

申请日：2013-03-11

Applicant: QUALCOMM Incorporated

Inventor： Zhenyu Sun ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Wenqing Wu ,  Peiyuan Wang

IPC: G11C11/02 ,  G11C11/16 ,  G11C14/00 ,  H03K3/037

CPC classification number: G11C11/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C14/0081 ,  H03K3/0375

Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.

Abstract translation: 具有反馈的磁性隧道结非易失性寄存器，用于强大的读写操作。 在一个实施例中，两个MTJ设备被配置为存储逻辑0或逻辑1，并且被耦合以将输出节点驱动到指示存储的逻辑0或逻辑1的电压.D触发器的输出是 馈送到两个MTJ器件，使得D触发器的状态可以在存储操作期间存储在两个MTJ器件中。 在读操作期间，D触发器输出两个MTJ器件的状态。 通过使用耦合到输出节点的边缘检测器来减轻读取干扰，使得如果检测到输出节点处的上升电压，则向D触发器提供低电压。

公开(公告)号：US20140198563A1

公开(公告)日：2014-07-17

申请号：US13792440

申请日：2013-03-11

Applicant: QUALCOMM INCORPORATED

Inventor： Zhenyu Sun ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Wenqing Wu ,  Peiyuan Wang

IPC: G11C11/02

CPC classification number: G11C11/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C14/0081 ,  H03K3/0375

Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.

Abstract translation: 具有反馈的磁性隧道结非易失性寄存器，用于强大的读写操作。 在一个实施例中，两个MTJ设备被配置为存储逻辑0或逻辑1，并且被耦合以将输出节点驱动到指示存储的逻辑0或逻辑1的电压.D触发器的输出是 馈送到两个MTJ器件，使得D触发器的状态可以在存储操作期间存储在两个MTJ器件中。 在读操作期间，D触发器输出两个MTJ器件的状态。 通过使用耦合到输出节点的边缘检测器来减轻读取干扰，使得如果检测到输出节点处的上升电压，则向D触发器提供低电压。