公开(公告)号：US20200066852A1

公开(公告)日：2020-02-27

申请号：US16670805

申请日：2019-10-31

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuma YOSHIDA ,  Takeshi IMAMURA ,  Toshikazu IMAI ,  Ryosuke OKAWA ,  Ryou KATO

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/423 ,  H01L29/78 ,  H01L23/00 ,  H01L21/8234 ,  H01L27/02

Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.

公开(公告)号：US20190319126A1

公开(公告)日：2019-10-17

申请号：US16447100

申请日：2019-06-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro MATSUSHIMA ,  Shigetoshi SOTA ,  Eiji YASUDA ,  Toshikazu IMAI ,  Ryosuke OKAWA ,  Kazuma YOSHIDA ,  Ryou KATO

IPC: H01L29/78 ,  H01L27/088 ,  H01L23/15

Abstract: A semiconductor device includes an N-type semiconductor substrate comprising silicon, an N-type low-concentration impurity layer that is in contact with the upper surface of the N-type semiconductor substrate, a metal layer that is in contact with the entire lower surface of the N-type semiconductor substrate and has a thickness of at least 20 μm, and first and second vertical MOS transistors formed in the low-concentration impurity layer. The ratio of the thickness of the metal layer to the thickness of a semiconductor layer containing the N-type semiconductor substrate and the low-concentration impurity layer is greater than 0.27. The semiconductor device further includes a support comprising a ceramic material and bonded to the entire lower surface of the metal layer only via a bonding layer.

公开(公告)号：US20190229194A1

公开(公告)日：2019-07-25

申请号：US16146272

申请日：2018-09-28

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuma YOSHIDA ,  Takeshi IMAMURA ,  Toshikazu IMAI ,  Ryosuke OKAWA ,  Ryou KATO

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/78 ,  H01L29/423 ,  H01L23/00

Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.

公开(公告)号：US20150318445A1

公开(公告)日：2015-11-05

申请号：US14800852

申请日：2015-07-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Songbaek CHOE ,  Naomi ANZUE ,  Ryou KATO ,  Toshiya YOKOGAWA

IPC: H01L33/40 ,  H01L33/50 ,  H01L33/32 ,  H01L33/06 ,  H01L33/16

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01L33/502 ,  H01L2224/16225

Abstract: A nitride-based semiconductor light-emitting device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane; and an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region, wherein the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm; an integral intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 20 and not more than 100; and the Ag electrode has a reflectance of not less than 70%.

Abstract translation: 氮化物系半导体发光元件包括：氮化物系半导体多层结构，其包含具有m面作为生长面的p型半导体区域; 以及设置成与p型半导体区域的生长平面接触的Ag电极，其中Ag电极的厚度在不小于200nm且不大于1000nm的范围内; Ag电极的生长面上的（111）面的X射线强度与（200）面的X射线强度的积分强度比在20以上且100以下的范围内， 并且Ag电极具有不小于70％的反射率。

公开(公告)号：US20190273141A1

公开(公告)日：2019-09-05

申请号：US16418617

申请日：2019-05-21

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuma YOSHIDA ,  Takeshi IMAMURA ,  Toshikazu IMAI ,  Ryosuke OKAWA ,  Ryou KATO

IPC: H01L29/417 ,  H01L29/78 ,  H01L27/088 ,  H01L23/00 ,  H01L29/423

Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.