公开(公告)号：US20190273141A1

公开(公告)日：2019-09-05

申请号：US16418617

申请日：2019-05-21

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuma YOSHIDA ,  Takeshi IMAMURA ,  Toshikazu IMAI ,  Ryosuke OKAWA ,  Ryou KATO

IPC: H01L29/417 ,  H01L29/78 ,  H01L27/088 ,  H01L23/00 ,  H01L29/423

Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.

公开(公告)号：US20200066852A1

公开(公告)日：2020-02-27

申请号：US16670805

申请日：2019-10-31

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuma YOSHIDA ,  Takeshi IMAMURA ,  Toshikazu IMAI ,  Ryosuke OKAWA ,  Ryou KATO

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/423 ,  H01L29/78 ,  H01L23/00 ,  H01L21/8234 ,  H01L27/02

Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.

公开(公告)号：US20220208458A1

公开(公告)日：2022-06-30

申请号：US17695227

申请日：2022-03-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshiki KAMIMURA ,  Takeshi IMAMURA ,  Akihiro MORIKAWA ,  Wataru TAMURA

IPC: H01G4/228 ,  H01G4/224 ,  H01G4/005 ,  H02B1/20

Abstract: A capacitor includes a bus bar. The bus bar includes a bus bar body member and a terminal formation member configured to be superposed on and fixed to a terminal formation part of the bus bar body member. In the terminal formation part, a plurality of first connection terminal parts are formed so as to be arranged in one direction, by portions of the terminal formation part being cut and raised. In the terminal formation member, a plurality of second connection terminal parts are formed so as to be arranged in one direction, by portions of the terminal formation member being cut and raised, and second openings are formed in places where the portions have been cut and raised. The first connection terminal parts and the second connection terminal parts are alternately arranged in one direction, by the first connection terminal parts being passed through the second openings.

公开(公告)号：US20180122939A1

公开(公告)日：2018-05-03

申请号：US15854220

申请日：2017-12-26

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tomonari OTA ,  Shigetoshi SOTA ,  Eiji YASUDA ,  Takeshi IMAMURA ,  Toshikazu IMAI ,  Ryosuke OKAWA ,  Kazuma YOSHIDA ,  Masaaki HIRAKO ,  Dohwan AHN

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L29/7827 ,  H01L21/823475 ,  H01L21/823487 ,  H01L24/47 ,  H01L27/088 ,  H01L29/41741 ,  H01L29/4238

Abstract: A semiconductor device in chip size package includes first and second metal oxide semiconductor transistors both vertical transistors formed in first and second regions obtained by dividing the semiconductor device into halves. The first metal oxide semiconductor transistor includes one or more first gate electrodes and four or more first source electrodes provided in one major surface, each of the first gate electrodes is surrounded, in top view, by the first source electrodes, and for any combination of a first gate electrode and a first source electrode, closest points between the first gate and first source electrodes are on a line inclined to a chip side. The second metal oxide semiconductor transistor includes the same structure as the first metal oxide semiconductor transistor. A conductor that connects the drains of the first and second metal oxide semiconductor transistors is provided in the other major surface of the semiconductor device.

公开(公告)号：US20190229194A1

公开(公告)日：2019-07-25

申请号：US16146272

申请日：2018-09-28

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kazuma YOSHIDA ,  Takeshi IMAMURA ,  Toshikazu IMAI ,  Ryosuke OKAWA ,  Ryou KATO

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/78 ,  H01L29/423 ,  H01L23/00

Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.