公开(公告)号：US20210013253A1

公开(公告)日：2021-01-14

申请号：US17028627

申请日：2020-09-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASAYUKI TAKASE ,  SHUNSUKE ISONO ,  YUUKO TOMEKAWA

IPC: H01L27/146

Abstract: An electronic device includes: a capacitor; an insulating layer; at feast one trench provided in the insulating layer; and a first conductive plug, at least part of which is surrounded by the insulating layer. The capacitor includes: a first lower electrode provided along an inner wall of the at least one trench, a dielectric layer provided on the first lower electrode, and an upper electrode provided on the dielectric layer. At least part of the first conductive plug is positioned between an upper surface of the insulating layer and a lowermost portion of the at least one trench.

公开(公告)号：US20240423004A1

公开(公告)日：2024-12-19

申请号：US18822525

申请日：2024-09-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKANORI DOI ,  JUNJI HIRASE ,  RYOTA SAKAIDA ,  SHUNSUKE ISONO ,  YUUKO TOMEKAWA

IPC: H10K39/32

Abstract: An image sensor includes a photoelectric conversion film, an upper electrode, and a connector. The upper electrode is located on or above the photoelectric conversion film. The connector is electrically connected to the upper electrode. On a first section parallel to a direction perpendicular to the photoelectric conversion film, the connector is in contact with the side surface of the photoelectric conversion film. On the first section, the upper electrode extends to a position outward of the outer edge of the upper surface of the photoelectric conversion film.

公开(公告)号：US20190229150A1

公开(公告)日：2019-07-25

申请号：US16251599

申请日：2019-01-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  HIDENARI KANEHARA ,  SANSHIRO SHISHIDO ,  TAKEYOSHI TOKUHARA

IPC: H01L27/30 ,  H04N5/374 ,  H04N5/376

Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.

公开(公告)号：US20230232644A1

公开(公告)日：2023-07-20

申请号：US18183049

申请日：2023-03-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  YUUKO TOMEKAWA ,  RYOTA SAKAIDA

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An imaging device includes a photoelectric conversion film and an electrode. The photoelectric conversion film converts light to charge. The electrode collects the charge. The electrode includes two or more layers. The two or more layers include a first layer containing tantalum nitride. An uppermost layer among the two or more layers contains a metal nitride.

公开(公告)号：US20210218912A1

公开(公告)日：2021-07-15

申请号：US17213597

申请日：2021-03-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  TATSUNORI MOMOSE ,  RYOTA SAKAIDA

IPC: H04N5/341 ,  H04N5/355 ,  H01L27/146

Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.

公开(公告)号：US20190237691A1

公开(公告)日：2019-08-01

申请号：US16247698

申请日：2019-01-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  AKIO NAKAJUN

IPC: H01L51/42 ,  H01L27/146

Abstract: An imaging device includes a semiconductor substrate that includes a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; and a first layer that covers the second electrode, the first layer being located above the pixel region and the peripheral region. A thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region. A level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.

公开(公告)号：US20250081713A1

公开(公告)日：2025-03-06

申请号：US18950278

申请日：2024-11-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  YUUKO TOMEKAWA ,  JUNJI HIRASE ,  RYOTA SAKAIDA

IPC: H10K39/32

Abstract: A method for manufacturing an imaging device includes forming a photoelectric conversion film such that a ratio of an overlapping area of the photoelectric conversion film and a support substrate in plan view to an area of the support substrate in plan view is greater than 0% and less than 100%. The method includes performing first etching to reduce an area of the photoelectric conversion film in plan view.

公开(公告)号：US20240423002A1

公开(公告)日：2024-12-19

申请号：US18814437

申请日：2024-08-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  HIDEYUKI UTSUMI ,  YUUKO TOMEKAWA ,  TAKANORI DOI ,  SHUNSUKE ISONO

IPC: H10K39/32

Abstract: A photoelectric converter includes a support face, and a photoelectric conversion film. The photoelectric conversion film is disposed at the support face. In a first cross-section parallel to a perpendicular direction that is perpendicular to the support face, the photoelectric conversion film has a first sloped face. In the first cross-section, the inclination angle of the first sloped face relative to a first parallel direction, which is parallel to the support face, is defined as a first slope angle. The first slope angle is greater than 0° and less than or equal to 5°.

公开(公告)号：US20240321916A1

公开(公告)日：2024-09-26

申请号：US18672455

申请日：2024-05-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  HIDENARI KANEHARA ,  YUUKO TOMEKAWA

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14636

Abstract: An imaging device includes a pixel section including pixels, a peripheral circuit section that is provided around the pixel section and that includes a peripheral circuit, and an intermediate layer that extends across the pixel section and the peripheral circuit section. The peripheral circuit section includes a light-shielding film located above the intermediate layer, at least one first conductive line that is located in the intermediate layer and that contains aluminum, and at least one barrier layer located between the at least one first conductive line and the light-shielding film.

公开(公告)号：US20180350862A1

公开(公告)日：2018-12-06

申请号：US15991676

申请日：2018-05-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： AKIO NAKAJUN ,  SANSHIRO SHISHIDO ,  SHUNSUKE ISONO

IPC: H01L27/146 ,  H01L27/30

Abstract: An imaging device includes a pixel, the pixel including a photoelectric converter which converts light into a signal charge and a charge detection circuit which detects the signal charge. The photoelectric converter includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface, a pixel electrode on the first surface, a first electrode adjacent to the pixel electrode on the first surface, the first electrode being electrically conductive to the photoelectric conversion layer, and a counter electrode on the second surface, the counter electrode facing the pixel electrode and the first electrode. A shortest distance between the pixel electrode and the first electrode in a plan view is smaller than a shortest distance between the pixel electrode and the first electrode.