公开(公告)号：US10088413B2

公开(公告)日：2018-10-02

申请号：US13680273

申请日：2012-11-19

Applicant: KLA-Tencor Corporation

Inventor： Hidong Kwak ,  Zhiming Jiang ,  Ward RDell Dixon ,  Kenneth Edward James, Jr. ,  Leonid Poslavsky ,  Torsten Kaack

IPC: G01N21/27 ,  G03F7/20 ,  G01N21/21

Abstract: Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

公开(公告)号：US20150199463A1

公开(公告)日：2015-07-16

申请号：US14594917

申请日：2015-01-12

Applicant: KLA-Tencor Corporation

Inventor： Jonathan Iloreta ,  Matthew A. Laffin ,  Leonid Poslavsky ,  Torsten Kaack ,  Qiang Zhao ,  Lie-Quan Lee

IPC: G06F17/50

CPC classification number: H01L22/12

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user. The resulting models can be exported to a file that can be used by others and may include security features to control the sharing of sensitive intellectual property with particular users.

Abstract translation: 提出了基于可重复使用的参数模型生成复杂设备结构测量模型的方法和工具。 采用这些模型的计量系统被配置为测量与不同半导体制造工艺相关联的结构和材料特性。 可重复使用的参数子结构模型由模型构建工具的用户输入的一组独立参数完全定义。 与模型形状相关联的所有其他变量和组成几何元素之间的内部约束在模型中被预先定义。 在一些实施例中，将一个或多个可重复使用的参数模型集成到复合半导体器件的测量模型中。 在另一方面，模型构建工具基于来自用户的输入生成可重复使用的参数子结构模型。 所得到的模型可以导出到其他人可以使用的文件，并且可能包括用于控制与特定用户共享敏感知识产权的安全功能。

公开(公告)号：US20130132021A1

公开(公告)日：2013-05-23

申请号：US13680273

申请日：2012-11-19

Applicant: KLA-Tencor Corporation

Inventor： Hidong Kwak ,  Zhiming Jiang ,  Ward RDell Dixon ,  Kenneth Edward James, JR. ,  Leonid Poslavsky ,  Torsten Kaack

IPC: G01N21/27

CPC classification number: G01N21/274 ,  G01N21/211 ,  G03F7/70608

Abstract: Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

Abstract translation: 介绍了目标检测系统校准系统参数值的方法和系统。 基于光谱误差的校准（SEBC）通过最小化给定样品或一组样品的不同检查系统之间的光谱误差的差异来提高检测系统之间的一致性。 确定系统参数值，使得由目标检查系统与样本的测量相关联的光谱误差与由参考检查系统对相同样本的测量相关联的光谱误差之间的差异最小化。 在一些示例中，系统参数值在不修改样本参数的情况下进行校准。 样本参数值的小的不准确性对校准几乎没有影响，因为目标系统和参考系统都测量相同的样本或一组样本。 通过在一组样品上执行SEBC，所得到的校准对于广泛的被测样品是稳健的。

公开(公告)号：US08711349B2

公开(公告)日：2014-04-29

申请号：US13626023

申请日：2012-09-25

Applicant: KLA-Tencor Corporation

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Zhiming Jiang ,  Jun-Jie Ye ,  Torsten Kaack ,  Qiang Zhao

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。

公开(公告)号：US20130083320A1

公开(公告)日：2013-04-04

申请号：US13626023

申请日：2012-09-25

Applicant: KLA-TENCOR CORPORATION

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Zhiming Jiang ,  Jun-Jie (Julien) Ye ,  Torsten Kaack ,  Qiang Zhao

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。

公开(公告)号：US09553033B2

公开(公告)日：2017-01-24

申请号：US14594917

申请日：2015-01-12

Applicant: KLA-Tencor Corporation

Inventor： Jonathan Iloreta ,  Matthew A. Laffin ,  Leonid Poslavsky ,  Torsten Kaack ,  Qiang Zhao ,  Lie-Quan Lee

IPC: G06F17/50 ,  H01L21/66

CPC classification number: H01L22/12

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user. The resulting models can be exported to a file that can be used by others and may include security features to control the sharing of sensitive intellectual property with particular users.

Abstract translation: 提出了基于可重复使用的参数模型生成复杂设备结构测量模型的方法和工具。 采用这些模型的计量系统被配置为测量与不同半导体制造工艺相关联的结构和材料特性。 可重复使用的参数子结构模型由模型构建工具的用户输入的一组独立参数完全定义。 与模型形状相关联的所有其他变量和组成几何元素之间的内部约束在模型中被预先定义。 在一些实施例中，将一个或多个可重复使用的参数模型集成到复合半导体器件的测量模型中。 在另一方面，模型构建工具基于来自用户的输入生成可重复使用的参数子结构模型。 所得到的模型可以导出到其他人可以使用的文件，并且可能包括用于控制与特定用户共享敏感知识产权的安全功能。