Abstract:
A system for analyzing a sample includes an illumination source with a plurality of transmitting optical fibers optically coupled to the illumination source and a detector with a plurality of receiving optical fibers optically coupled to the detector. The system further includes a plurality of probes coupled to respective ones of the plurality of transmitting optical fibers and respective ones of the plurality of receiving optical fibers. The plurality of probes are configured to illuminate respective portions of a surface of the sample and configured to receive illumination reflected, refracted, or radiated from the respective portions of the surface of the sample. The system may further include one or more switches and/or splitters configured to optically couple respective ones of the plurality of transmitting optical fibers to the illumination source and/or configured to optically couple respective ones of the plurality of receiving optical fibers to the detector.
Abstract:
A system for analyzing a sample includes an illumination source with a plurality of transmitting optical fibers optically coupled to the illumination source and a detector with a plurality of receiving optical fibers optically coupled to the detector. The system further includes a plurality of probes coupled to respective ones of the plurality of transmitting optical fibers and respective ones of the plurality of receiving optical fibers. The plurality of probes are configured to illuminate respective portions of a surface of the sample and configured to receive illumination reflected, refracted, or radiated from the respective portions of the surface of the sample. The system may further include one or more switches and/or splitters configured to optically couple respective ones of the plurality of transmitting optical fibers to the illumination source and/or configured to optically couple respective ones of the plurality of receiving optical fibers to the detector.
Abstract:
A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.
Abstract:
A method to collect data and train, validate and deploy statistical models to predict overlay errors using patterned wafer geometry data and other relevant information includes selecting a training wafer set, measuring at multiple lithography steps and calculating geometry differences, applying a plurality of predictive models to the training wafer geometry differences and comparing predicted overlay to the measured overlay on the training wafer set. The most accurate predictive model is identified and the results fed-forward to the lithography scanner tool which can correct for these effects and reduce overlay errors during the wafer scan-and-expose processes.
Abstract:
A method to collect data and train, validate and deploy statistical models to predict overlay errors using patterned wafer geometry data and other relevant information includes selecting a training wafer set, measuring at multiple lithography steps and calculating geometry differences, applying a plurality of predictive models to the training wafer geometry differences and comparing predicted overlay to the measured overlay on the training wafer set. The most accurate predictive model is identified and the results fed-forward to the lithography scanner tool which can correct for these effects and reduce overlay errors during the wafer scan-and-expose processes.
Abstract:
A method to collect data and train, validate and deploy statistical models to predict overlay errors using patterned wafer geometry data and other relevant information includes selecting a training wafer set, measuring at multiple lithography steps and calculating geometry differences, applying a plurality of predictive models to the training wafer geometry differences and comparing predicted overlay to the measured overlay on the training wafer set. The most accurate predictive model is identified and the results fed-forward to the lithography scanner tool which can correct for these effects and reduce overlay errors during the wafer scan-and-expose processes.
Abstract:
A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.