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公开(公告)号：US10768533B2
公开(公告)日：2020-09-08
申请号：US15730551
申请日：2017-10-11
Applicant: KLA-Tencor Corporation
Inventor： Hong Xiao , Nadav Gutman
Abstract: A system for generating and implementing programmed defects includes a lithography tool configured to form a multi-pattern structure including a first array pattern and a second array pattern on a sample. The first array pattern or the second array pattern contains a programmed defect to differentiate the first array pattern from the second array pattern. The system includes a metrology tool configured to acquire one or more images of the first array pattern and the second array pattern having a field-of-view containing the programmed defect. The system includes a controller including one or more processors. The one or more processors are configured to receive the images of the first array pattern and the second array pattern from the metrology, and determine a metrology parameter associated with the first array pattern or the second array pattern.
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公开(公告)号：US20190122357A1
公开(公告)日：2019-04-25
申请号：US15739381
申请日：2017-10-22
Applicant: KLA-Tencor Corporation
Inventor： Tzahi Grunzweig , Nadav Gutman , David Gready , Mark Ghinovker , Vladimir Levinski , Claire E. Staniunas , Nimrod Shuall , Yuri Paskover
Abstract: Systems and methods are provided, which calculate overlay misregistration error estimations from analyzed measurements of each ROI (region of interest) in at least one metrology imaging target, and incorporate the calculated overlay misregistration error estimations in a corresponding estimation of overlay misregistration. Disclosed embodiments provide a graduated and weighted analysis of target quality which may be integrated in a continuous manner into the metrology measurement processes, and moreover evaluates target quality in terms of overlay misregistration, which forms a common basis for evaluation of errors from different sources, such as characteristics of production steps, measurement parameters and target characteristics. Such common basis then enables any of combining various error sources to give a single number associated with measurement fidelity, analyzing various errors at wafer, lot and process levels, and/or to trade-off the resulting accuracy for throughput by reducing the number of measurements, in a controlled manner.
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公开(公告)号：US09934353B2
公开(公告)日：2018-04-03
申请号：US14974732
申请日：2015-12-18
Applicant: KLA-Tencor Corporation
Inventor： Mohamed El Kodadi , Nuriel Amir , Roie Volkovich , Vladimir Levinski , Yoel Feler , Daniel Kandel , Nadav Gutman , Stilian Pandev , Dzimtry Sanko
CPC classification number: G06F17/5081 , G01N21/4785 , G03F7/70641 , G03F7/70683 , G06F17/5072
Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.
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公开(公告)号：US11075126B2
公开(公告)日：2021-07-27
申请号：US16477552
申请日：2019-06-04
Applicant: KLA-TENCOR CORPORATION
Inventor： Roie Volkovich , Liran Yerushalmi , Nadav Gutman
Abstract: A misregistration metrology system useful in manufacturing semiconductor device wafers including an optical misregistration metrology tool configured to measure misregistration at at least one target between two layers of a semiconductor device which is selected from a batch of semiconductor device wafers which are intended to be identical, an electron beam misregistration metrology tool configured to measure misregistration at the at least one target between two layers of a semiconductor device which is selected from the batch and a combiner operative to combine outputs of the optical misregistration metrology tool and the electron beam misregistration metrology tool to provide a combined misregistration metric.
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公开(公告)号：US20200266112A1
公开(公告)日：2020-08-20
申请号：US16477552
申请日：2019-06-04
Applicant: KLA-TENCOR CORPORATION
Inventor： Roie Volkovich , Liran Yerushalmi , Nadav Gutman
Abstract: A misregistration metrology system useful in manufacturing semiconductor device wafers including an optical misregistration metrology tool configured to measure misregistration at at least one target between two layers of a semiconductor device which is selected from a batch of semiconductor device wafers which are intended to be identical, an electron beam misregistration metrology tool configured to measure misregistration at the at least one target between two layers of a semiconductor device which is selected from the batch and a combiner operative to combine outputs of the optical misregistration metrology tool and the electron beam misregistration metrology tool to provide a combined misregistration metric.
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Patent Agency Ranking
公开(公告)号：US10684563B2
公开(公告)日：2020-06-16
申请号：US15761830
申请日：2018-02-19
Applicant: KLA-TENCOR CORPORATION
Inventor： Amnon Manassen , Andrew Hill , Nadav Gutman , Yossi Simon , Alexander Novikov , Eugene Maslovsky
Abstract: Metrology systems and methods are provided, which derive metrology target position on the wafer and possibly the target focus position during the movement of the wafer on the system's stage. The positioning data is derived before the target arrives its position (on-the-fly), sparing the time required in the prior art for the acquisition stage and increasing the throughput of the systems and methods. The collection channel may be split to provide for an additional moving-imaging channel comprising at least one TDI (time delay and integration) sensor with an associated analysis unit configured to derive wafer surface information, positioning and/or focusing information of the metrology targets with respect to the objective lens, during wafer positioning movements towards the metrology targets. Additional focusing-during-movement module and possibly feedbacking derived position and/or focus information to the stage may enhance the accuracy of the stopping of the stage.
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公开(公告)号：US20190228518A1
公开(公告)日：2019-07-25
申请号：US15761830
申请日：2018-02-19
Applicant: KLA-TENCOR CORPORATION
Inventor： Amnon Manassen , Andrew Hill , Nadav Gutman , Yossi Simon , Alexander Novikov , Eugene Maslovsky
Abstract: Metrology systems and methods are provided, which derive metrology target position on the wafer and possibly the target focus position during the movement of the wafer on the system's stage. The positioning data is derived before the target arrives its position (on-the-fly), sparing the time required in the prior art for the acquisition stage and increasing the throughput of the systems and methods. The collection channel may be split to provide for an additional moving-imaging channel comprising at least one TDI (time delay and integration) sensor with an associated analysis unit configured to derive wafer surface information, positioning and/or focusing information of the metrology targets with respect to the objective lens, during wafer positioning movements towards the metrology targets. Additional focusing-during-movement module and possibly feedbacking derived position and/or focus information to the stage may enhance the accuracy of the stopping of the stage.
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公开(公告)号：US10474040B2
公开(公告)日：2019-11-12
申请号：US16009939
申请日：2018-06-15
Applicant: KLA-Tencor Corporation
Inventor： Frank Laske , Ulrich Pohlmann , Stefan Eyring , Nadav Gutman
Abstract: An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.
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公开(公告)号：US20190271542A1
公开(公告)日：2019-09-05
申请号：US16057498
申请日：2018-08-07
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Frank Laske , Nadav Gutman
Abstract: An overlay metrology system may include a controller to generate optical tool error adjustments for a hybrid overlay target including optically-resolvable features and device-scale features by measuring a difference between an optical overlay measurement based on the optically-resolvable features and a device-scale overlay measurement based on the device-scale features, generate target-to-device adjustments for the hybrid overlay target based on positions of features within the device area, determine device-relevant overlay measurements for one or more locations in the device area based on at least one of the optical overlay measurement, the optical tool error adjustments, or the target-to-device adjustments, and provide overlay correctables for the device area to a lithography tool to modify exposure conditions for at least one subsequent exposure based on the device-relevant overlay measurements.
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公开(公告)号：US20190178630A1
公开(公告)日：2019-06-13
申请号：US16132157
申请日：2018-09-14
Applicant: KLA-Tencor Corporation
Inventor： Eran Amit , Amnon Manassen , Nadav Gutman
Abstract: Metrology targets designs, design methods and measurement methods are provided, which reduce noise and enhance measurement accuracy. Disclosed targets comprise an additional periodic structure which is orthogonal to the measurement direction along which given target structures are periodic. For example, in addition to two or more periodic structures along each measurement direction in imaging or scatterometry targets, a third, orthogonal periodic structure may be introduced, which provides additional information in the orthogonal direction, can be used to reduce noise, enhances accuracy and enables the application of machine learning algorithms to further enhance accuracy. Signals may be analyzed slice-wise with respect to the orthogonal periodic structure, which can be integrated in a process compatible manner in both imaging and scatterometry targets.
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