High accuracy of relative defect locations for repeater analysis

    公开(公告)号:US11067516B2

    公开(公告)日:2021-07-20

    申请号:US16613787

    申请日:2018-05-14

    Abstract: Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

    Adaptive local threshold and color filtering

    公开(公告)号:US10395359B2

    公开(公告)日:2019-08-27

    申请号:US15624649

    申请日:2017-06-15

    Abstract: Methods and systems for detecting defects on a wafer using adaptive local thresholding and color filtering are provided. One method includes determining local statistics of pixels in output for a wafer generated using an inspection system, determining which of the pixels are outliers based on the local statistics, and comparing the outliers to the pixels surrounding the outliers to identify the outliers that do not belong to a cluster of outliers as defect candidates. The method also includes determining a value for a difference in color between the pixels of the defect candidates and the pixels surrounding the defect candidates. The method further includes identifying the defect candidates that have a value for the difference in color greater than or equal to a predetermined value as nuisance defects and the defect candidates that have a value for the difference in color less than the predetermined value as real defects.

    System and method for defining care areas in repeating structures of design data

    公开(公告)号:US10339262B2

    公开(公告)日:2019-07-02

    申请号:US15351813

    申请日:2016-11-15

    Abstract: A method includes identifying a first set of a first care area with a first sensitivity threshold, the first care area associated with a first design of interest within a block of repeating cells in design data; identifying an additional set of an additional care area with an additional sensitivity threshold, the additional care area associated with an additional design of interest within the block of repeating cells in design data; identifying one or more defects within the first set of the first care areas in one or more images of a selected region of a sample based on the first sensitivity threshold; and identifying one or more defects within the additional set of the additional care areas in the one or more images of the selected region of the sample based on the additional sensitivity threshold.

    Wafer defect discovery
    4.
    发明授权
    Wafer defect discovery 有权
    晶圆缺陷发现

    公开(公告)号:US09518934B2

    公开(公告)日:2016-12-13

    申请号:US14931226

    申请日:2015-11-03

    Abstract: Systems and methods for discovering defects on a wafer are provided. One method includes detecting defects on a wafer by applying a threshold to output generated by a detector in a first scan of the wafer and determining values for features of the detected defects. The method also includes automatically ranking the features, identifying feature cut-lines to group the defect into bins, and, for each of the bins, determining one or more parameters that if applied to the values for the features of the defects in each of the bins will result in a predetermined number of the defects in each of the bins. The method also includes applying the one or more determined parameters to the output generated by the detector in a second scan of the wafer to generate a defect population that has a predetermined defect count and is diversified in the values for the features.

    Abstract translation: 提供了发现晶片缺陷的系统和方法。 一种方法包括通过在晶片的第一次扫描中施加由检测器产生的输出的阈值来检测晶片上的缺陷,并确定检测到的缺陷的特征的值。 该方法还包括对特征进行自动排序,识别特征切割线以将缺陷分组成箱,并且对于每个箱,确定一个或多个参数,如果应用于每个中的缺陷的特征的值 箱将导致每个箱中预定数量的缺陷。 该方法还包括将一个或多个确定的参数应用于在晶片的第二次扫描中由检测器产生的输出,以产生具有预定缺陷计数并且在特征值中多样化的缺陷群体。

    Adaptive Local Threshold and Color Filtering
    5.
    发明申请
    Adaptive Local Threshold and Color Filtering 有权
    自适应局部阈值和颜色过滤

    公开(公告)号:US20150043804A1

    公开(公告)日:2015-02-12

    申请号:US14450170

    申请日:2014-08-01

    Abstract: Methods and systems for detecting defects on a wafer using adaptive local thresholding and color filtering are provided. One method includes determining local statistics of pixels in output for a. wafer generated using an inspection system, determining which of the pixels are outliers based on the local statistics, and comparing the outliers to the pixels surrounding the outliers to identify the outliers that do not belong to a cluster of outliers as defect candidates. The method also includes determining a value for a difference in color between the pixels of the defect candidates and the pixels surrounding the defect candidates. The method further includes identifying the defect candidates that have a value for the difference in color greater than or equal to a predetermined value as nuisance defects and the defect candidates that have a value for the difference in color less than the predetermined value as real defects.

    Abstract translation: 提供了使用自适应局部阈值和颜色滤波来检测晶片上的缺陷的方法和系统。 一种方法包括确定a的输出中的像素的局部统计。 使用检查系统生成的晶片,基于本地统计确定哪个像素是异常值,以及将异常值与异常值周围的像素进行比较,以将不属于异常值聚类的异常值识别为缺陷候选。 该方法还包括确定缺陷候选的像素与围绕缺陷候选的像素之间的颜色差异的值。 该方法还包括将具有大于或等于预定值的颜色差值的缺陷候选识别为具有小于预定值的颜色差值作为真实缺陷的有害缺陷和缺陷候选。

    Wafer Inspection Using Free-Form Care Areas
    6.
    发明申请
    Wafer Inspection Using Free-Form Care Areas 有权
    使用自由形式护理区域的晶圆检查

    公开(公告)号:US20140376802A1

    公开(公告)日:2014-12-25

    申请号:US14168011

    申请日:2014-01-30

    Abstract: Methods and systems for detecting defects on a wafer are provided. One method includes determining characteristics of care areas for a wafer based on wafer patterns. Determining the characteristics includes determining locations of care areas, identifying at least one pattern of interest (POI) in the wafer patterns for each of the care areas, allowing any of the care areas to have a free-form shape, allowing the care areas to be larger than frame images and selecting two or more POIs for at least one of the care areas. The method also includes searching for POIs in images generated for the wafer using an inspection system. In addition, the method includes detecting defects on the wafer by determining positions of the care areas in the images and applying one or more defect detection methods to the images based on the positions of the care areas in the images.

    Abstract translation: 提供了用于检测晶片上的缺陷的方法和系统。 一种方法包括基于晶片图案确定晶片护理区域的特征。 确定特征包括确定护理区域的位置,为每个护理区域确定晶片图案中的至少一种感兴趣模式(POI),允许任何护理区域具有自由形状,允许护理区域 大于框架图像并且为至少一个护理区域选择两个或更多个POI。 该方法还包括使用检查系统搜索为晶片生成的图像中的POI。 此外,该方法包括通过确定图像中的护理区域的位置并基于图像中的护理区域的位置将一个或多个缺陷检测方法应用于图像来检测晶片上的缺陷。

    Detecting defects on a wafer using defect-specific information

    公开(公告)号:US09721337B2

    公开(公告)日:2017-08-01

    申请号:US14944130

    申请日:2015-11-17

    Abstract: Methods and systems for detecting defects on a wafer using defect-specific information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest formed on the wafer and a known DOI occurring proximate to or in the pattern of interest. The information includes an image of the target on the wafer. The method also includes searching for target candidates on the wafer or another wafer. The target candidates include the pattern of interest. The target and target candidate locations are provided to defect detection. In addition, the method includes detecting the known DOI in the target candidates by identifying potential DOI locations in images of the target candidates and applying one or more detection parameters to images of the potential DOI locations.

    Detecting Defects on a Wafer Using Defect-Specific Information
    10.
    发明申请
    Detecting Defects on a Wafer Using Defect-Specific Information 有权
    使用缺陷信息检测晶片上的缺陷

    公开(公告)号:US20160071256A1

    公开(公告)日:2016-03-10

    申请号:US14944130

    申请日:2015-11-17

    Abstract: Methods and systems for detecting defects on a wafer using defect-specific information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest formed on the wafer and a known DOI occurring proximate to or in the pattern of interest. The information includes an image of the target on the wafer. The method also includes searching for target candidates on the wafer or another wafer. The target candidates include the pattern of interest. The target and target candidate locations are provided to defect detection. In addition, the method includes detecting the known DOI in the target candidates by identifying potential DOI locations in images of the target candidates and applying one or more detection parameters to images of the potential DOI locations.

    Abstract translation: 提供了使用缺陷特定信息检测晶片上的缺陷的方法和系统。 一种方法包括获取晶片上目标的信息。 目标包括在晶片上形成的感兴趣图案,以及在感兴趣的图案附近或其中出现的已知DOI。 信息包括晶片上的目标图像。 该方法还包括在晶片或另一晶片上搜索目标候选。 目标候选人包括兴趣模式。 将目标候选位置和目标候选位置提供给缺陷检测。 此外,该方法包括通过识别目标候选图像中的潜在DOI位置并将一个或多个检测参数应用于潜在DOI位置的图像来检测目标候选中的已知DOI。

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