DESIGN AIDED IMAGE RECONSTRUCTION
    1.
    发明申请

    公开(公告)号:US20190295237A1

    公开(公告)日:2019-09-26

    申请号:US16361079

    申请日:2019-03-21

    Abstract: Methods and systems for determining boundaries of patterned features formed on a specimen from an unresolved image of the specimen are provided. One system includes computer subsystem(s) configured for comparing a difference image in which patterned feature(s) are unresolved to different simulated images. The different simulated images are generated by simulating difference images generated for the patterned feature(s) formed on the specimen with different perturbations, respectively. The computer subsystem(s) are configured for, based on the comparing, assigning an amplitude to each of the different perturbations. The computer subsystem(s) are further configured for determining one or more boundaries of the patterned feature(s) formed on the specimen by applying the different perturbations to one or more designed boundaries of the patterned feature(s) with the assigned amplitudes.

    Sub-Pixel and Sub-Resolution Localization of Defects on Patterned Wafers
    2.
    发明申请
    Sub-Pixel and Sub-Resolution Localization of Defects on Patterned Wafers 有权
    子像素和子分辨率定位在图案化的晶圆上的缺陷

    公开(公告)号:US20160292840A1

    公开(公告)日:2016-10-06

    申请号:US15084340

    申请日:2016-03-29

    Inventor: Soren Konecky

    CPC classification number: G06T7/001 G06T2207/10061 G06T2207/30148

    Abstract: Methods and systems for determining if a defect detected on a specimen is a DOI (Defect of Interest) or a nuisance are provided. One system includes computer subsystem(s) configured for aligning output of an inspection subsystem for an area on a specimen to simulated output of the inspection subsystem for the area on the specimen and detecting a defect in the output for the area on the specimen. The computer subsystem(s) are also configured for determining a location of the defect in the output with respect to patterned features in the simulated output based on results of the detecting and aligning, determining a distance between the determined location of the defect and a known location of interest on the specimen, and determining if the defect is a DOI or a nuisance based on the determined distance.

    Abstract translation: 用于确定样本上检测到的缺陷是否为DOI(感兴趣缺陷)或滋扰的方法和系统。 一个系统包括计算机子系统,其被配置用于将样本上的区域的检查子系统的输出与样本上的区域的检查子系统的模拟输出对齐,并且检测样本上的区域的输出中的缺陷。 计算机子系统还被配置为基于检测和对准的结果来确定关于模拟输出中的图案化特征的输出中的缺陷的位置,确定所确定的缺陷位置与已知的 对样本的兴趣位置,以及根据所确定的距离确定缺陷是DOI还是妨扰。

    System and Method for Defining Care Areas in Repeating Structures of Design Data

    公开(公告)号:US20170286589A1

    公开(公告)日:2017-10-05

    申请号:US15351813

    申请日:2016-11-15

    CPC classification number: G06F17/5081 G01N21/9501 G03F7/7065

    Abstract: A method includes identifying a first set of a first care area with a first sensitivity threshold, the first care area associated with a first design of interest within a block of repeating cells in design data; identifying an additional set of an additional care area with an additional sensitivity threshold, the additional care area associated with an additional design of interest within the block of repeating cells in design data; identifying one or more defects within the first set of the first care areas in one or more images of a selected region of a sample based on the first sensitivity threshold; and identifying one or more defects within the additional set of the additional care areas in the one or more images of the selected region of the sample based on the additional sensitivity threshold.

    Defect Classification by Fitting Optical Signals to a Point-Spread Function

    公开(公告)号:US20200175664A1

    公开(公告)日:2020-06-04

    申请号:US16355584

    申请日:2019-03-15

    Abstract: A semiconductor die is inspected using an optical microscope to generate a test image of the semiconductor die. A difference image between the test image of the semiconductor die and a reference image is derived. For each defect of a plurality of defects for the semiconductor die, a point-spread function is fit to the defect as indicated in the difference image and one or more dimensions of the fitted point-spread function are determined. Potential defects of interest in the plurality of defects are distinguished from nuisance defects, based at least in part on the one or more dimensions of the fitted point-spread function for respective defects of the plurality of defects.

    System and method for defining care areas in repeating structures of design data

    公开(公告)号:US10339262B2

    公开(公告)日:2019-07-02

    申请号:US15351813

    申请日:2016-11-15

    Abstract: A method includes identifying a first set of a first care area with a first sensitivity threshold, the first care area associated with a first design of interest within a block of repeating cells in design data; identifying an additional set of an additional care area with an additional sensitivity threshold, the additional care area associated with an additional design of interest within the block of repeating cells in design data; identifying one or more defects within the first set of the first care areas in one or more images of a selected region of a sample based on the first sensitivity threshold; and identifying one or more defects within the additional set of the additional care areas in the one or more images of the selected region of the sample based on the additional sensitivity threshold.

    Defect classification by fitting optical signals to a point-spread function

    公开(公告)号:US10957035B2

    公开(公告)日:2021-03-23

    申请号:US16355584

    申请日:2019-03-15

    Abstract: A semiconductor die is inspected using an optical microscope to generate a test image of the semiconductor die. A difference image between the test image of the semiconductor die and a reference image is derived. For each defect of a plurality of defects for the semiconductor die, a point-spread function is fit to the defect as indicated in the difference image and one or more dimensions of the fitted point-spread function are determined. Potential defects of interest in the plurality of defects are distinguished from nuisance defects, based at least in part on the one or more dimensions of the fitted point-spread function for respective defects of the plurality of defects.

    Sub-pixel and sub-resolution localization of defects on patterned wafers

    公开(公告)号:US09875536B2

    公开(公告)日:2018-01-23

    申请号:US15084340

    申请日:2016-03-29

    Inventor: Soren Konecky

    CPC classification number: G06T7/001 G06T2207/10061 G06T2207/30148

    Abstract: Methods and systems for determining if a defect detected on a specimen is a DOI (Defect of Interest) or a nuisance are provided. One system includes computer subsystem(s) configured for aligning output of an inspection subsystem for an area on a specimen to simulated output of the inspection subsystem for the area on the specimen and detecting a defect in the output for the area on the specimen. The computer subsystem(s) are also configured for determining a location of the defect in the output with respect to patterned features in the simulated output based on results of the detecting and aligning, determining a distance between the determined location of the defect and a known location of interest on the specimen, and determining if the defect is a DOI or a nuisance based on the determined distance.

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