SCANNING OVERLAY METROLOGY USING OVERLAY TARGETS HAVING MULTIPLE SPATIAL FREQUENCIES

    公开(公告)号:US20230213875A1

    公开(公告)日:2023-07-06

    申请号:US17709104

    申请日:2022-03-30

    CPC classification number: G03F7/70633 G01B9/02041

    Abstract: An overlay metrology system may include an illumination source and illumination optics to illuminate an overlay target on a sample with illumination from the illumination source as the sample is in motion with respect to the illumination from the illumination source in accordance with a measurement recipe. The overlay target may include one or more cells, where a single cell is suitable for measurement along a particular direction. Such a cell may include two or more gratings with different pitches. Further, the system may include two or more photodetectors, each configured to capture three diffraction lobes from the two or more grating structures. The system may further include a controller to determine an overlay measurement associated with each cell of the overlay target.

    ON-THE-FLY SCATTEROMETRY OVERLAY METROLOGY TARGET

    公开(公告)号:US20220187062A1

    公开(公告)日:2022-06-16

    申请号:US17119536

    申请日:2020-12-11

    Abstract: A metrology target is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology target includes a first set of pattern elements having a first pitch, where the first set of pattern elements includes segmented pattern elements. The metrology target includes a second set of pattern elements having a second pitch, where the second set of pattern elements includes segmented pattern elements. The metrology target includes a third set of pattern elements having a third pitch, where the third set of pattern elements includes segmented pattern elements.

    SYSTEM AND METHOD FOR SUPPRESSION OF TOOL INDUCED SHIFT IN SCANNING OVERLAY METROLOGY

    公开(公告)号:US20240167813A1

    公开(公告)日:2024-05-23

    申请号:US18099798

    申请日:2023-01-20

    CPC classification number: G01B11/272 G01N21/4788 G01N21/956 G01B2210/56

    Abstract: An overlay metrology system and method are disclosed for generating an overlay measurement of an overlay target including cells with structures in reversed orders. The overlay metrology system may include an illumination sub-system and a collection sub-system. The collection sub-system may include one or more detectors to collect measurement light from a sample. The sample, according to a metrology recipe, may include an overlay target having a first cell of a first cell type and a second cell of a second cell type, where the second cell type includes structures in a reverse order relative to the first cell type. The metrology recipe may include receiving detection signals, generating an overlay measurement of each cell based on the detection signals, and generating an overlay measurement associated with the overlay target based on a value indicative of an average of the overlay measurements of each cell.

    Scanning overlay metrology using overlay targets having multiple spatial frequencies

    公开(公告)号:US11796925B2

    公开(公告)日:2023-10-24

    申请号:US17709104

    申请日:2022-03-30

    CPC classification number: G03F7/70633 G01B9/02041

    Abstract: An overlay metrology system may include an illumination source and illumination optics to illuminate an overlay target on a sample with illumination from the illumination source as the sample is in motion with respect to the illumination from the illumination source in accordance with a measurement recipe. The overlay target may include one or more cells, where a single cell is suitable for measurement along a particular direction. Such a cell may include two or more gratings with different pitches. Further, the system may include two or more photodetectors, each configured to capture three diffraction lobes from the two or more grating structures. The system may further include a controller to determine an overlay measurement associated with each cell of the overlay target.

    Non-Orthogonal Target and Method for Using the Same in Measuring Misregistration of Semiconductor Devices

    公开(公告)号:US20210364935A1

    公开(公告)日:2021-11-25

    申请号:US16964734

    申请日:2020-06-25

    Abstract: A target for use in the measurement of misregistration between layers formed on a wafer in the manufacture of semiconductor devices, the target including a first pair of periodic structures (FPPS) and a second pair of periodic structures (SPPS), each of the FPPS and the SPPS including a first edge, a second edge, a plurality of first periodic structures formed in a first area as part of a first layer and having a first pitch along a first pitch axis, the first pitch axis not being parallel to either of the first edge or second edge, and a plurality of second periodic structures formed in a second area as part of a second layer and having the first pitch along a second pitch axis, the second pitch axis being generally parallel to the first pitch axis.

    MULTI-PITCH GRID OVERLAY TARGET FOR SCANNING OVERLAY METROLOGY

    公开(公告)号:US20240068804A1

    公开(公告)日:2024-02-29

    申请号:US18234773

    申请日:2023-08-16

    CPC classification number: G01B11/272 G01B9/02043 H01L21/682

    Abstract: An overlay metrology system with pitches in multiple directions in a single cell is disclosed. The overlay target may, according to a metrology recipe, include a multi-layer structure on two or more layers of a cell of the sample. The multi-layer structure may include structures in each layer having one or more pitches in one or more directions of periodicity. The multi-layer structure may include structures with a first pitch in a first direction, a second pitch in a second direction, a third pitch in the first direction, and a fourth pitch in the second direction. At least one of the first pitch or the third pitch may be different than at least one of the second pitch or the fourth pitch.

    Non-orthogonal target and method for using the same in measuring misregistration of semiconductor devices

    公开(公告)号:US11409205B2

    公开(公告)日:2022-08-09

    申请号:US16964734

    申请日:2020-06-25

    Abstract: A target for use in the measurement of misregistration between layers formed on a wafer in the manufacture of semiconductor devices, the target including a first pair of periodic structures (FPPS) and a second pair of periodic structures (SPPS), each of the FPPS and the SPPS including a first edge, a second edge, a plurality of first periodic structures formed in a first area as part of a first layer and having a first pitch along a first pitch axis, the first pitch axis not being parallel to either of the first edge or second edge, and a plurality of second periodic structures formed in a second area as part of a second layer and having the first pitch along a second pitch axis, the second pitch axis being generally parallel to the first pitch axis.

    On-the-fly scatterometry overlay metrology target

    公开(公告)号:US11378394B1

    公开(公告)日:2022-07-05

    申请号:US17119536

    申请日:2020-12-11

    Abstract: A metrology target is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology target includes a first set of pattern elements having a first pitch, where the first set of pattern elements includes segmented pattern elements. The metrology target includes a second set of pattern elements having a second pitch, where the second set of pattern elements includes segmented pattern elements. The metrology target includes a third set of pattern elements having a third pitch, where the third set of pattern elements includes segmented pattern elements.

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