Abstract:
[Problem to be Solved by the Disclosure] Provided is a mask blank substrate. [Means for Solving the Problem] The mask blank substrate includes two opposing main surfaces, consists of a glass material containing SiO2 and TiO2, has a first region in one main surface side, the first region is a region within a 132 mm×104 mm square including a center portion in the one main surface and which is a region extending from the one main surface toward the other main surface up to a position of 500 μm in depth, an inner region of the substrate excluding the first region has a locally non-uniform portion, a ratio of Ti content rate to Si content rate (Ti/Si) of the non-uniform portion differs from Ti/Si of the inner region excluding the non-uniform portion by 0.25% or more, and the variation of Ti content rate in the inner region of the substrate excluding the first region and the non-uniform portion is 0.06 mass % or less.
Abstract:
Provided are a mask blank substrate which has effectively and extremely high principal surface flatness while a reduction in the manufacturing throughput of the mask blank substrate is suppressed, a mask blank, and a transfer mask. Also provided are manufacturing methods therefor. virtual reference surface that becomes an optically effective flat reference surface defined by a Zernike polynomial which is composed of only terms in which the order of a variable related to a radius is the second or lower order, and includes one or more terms in which the order of the variable related to the radius is the second order is set, and a mask blank substrate satisfying the condition that data (PV value) relating to the difference between the maximum value and the minimum value of the difference data between the reference surface and the measured shape of the mask blank substrate is one-eighth or less of an exposure wavelength (λ) is selected.
Abstract:
Provided are a mask blank substrate which has effectively and extremely high principal surface flatness while a reduction in the manufacturing throughput of the mask blank substrate is suppressed, a mask blank, and a transfer mask. Also provided are manufacturing methods therefor.A virtual reference surface that becomes an optically effective flat reference surface defined by a Zernike polynomial which is composed of only terms in which the order of a variable related to a radius is the second or lower order, and includes one or more terms in which the order of the variable related to the radius is the second order is set, and a mask blank substrate satisfying the condition that data (PV value) relating to the difference between the maximum value and the minimum value of the difference data between the reference surface and the measured shape of the mask blank substrate is one-eighth or less of an exposure wavelength (A) is selected.
Abstract:
The object is to provide a mask blank substrate, a mask blank, and a transfer mask which can achieve easy correction of a wavefront by a wavefront correction function of an exposure apparatus. The further object is to provide methods for manufacturing them.A virtual surface shape, which is an optically effective flat reference surface shape defined by a Zernike polynomial, is determined, wherein the Zernike polynomial is composed of only terms in which the order of variables related to a radius is second or lower order and includes one or more terms in which the order of the variables related to a radius is second-order; and the mask blank substrate, in which difference data (PV value) between the maximum value and the minimum value of difference shape between a virtual surface shape and a composite surface shape obtained by composing respective surface shapes of two main surfaces is 25 nm or less, is selected.
Abstract:
Provided is a thin film evaluation method for a transfer mask which is adapted to be applied with ArF excimer laser exposure light and comprises a thin film formed with a pattern on a transparent substrate. The method includes intermittently irradiating pulsed laser light onto the thin film to thereby evaluate the irradiation durability of the thin film.
Abstract:
A mask blank substrate and a method for selecting a mask blank substrate wherein a square calculation region is set on the main surface of the substrate. Specific points are set at the corner portions of the calculation region. The heights of the specific points from a reference plane are acquired, an imaginary plane passing through three of the specific points is set, an intersection between the imaginary plane and a perpendicular line that passes through the remaining of the specific points and that is perpendicular to the reference plane is set, and the distance between the remaining of the specific points and the intersection is calculated. A substrate in which the distance satisfies a predetermined reference value is selected as a mask blank substrate.
Abstract:
The object is to provide a mask blank substrate, a mask blank, and a transfer mask which can achieve easy correction of a wavefront by a wavefront correction function of an exposure apparatus. The further object is to provide methods for manufacturing them.A virtual surface shape, which is an optically effective flat reference surface shape defined by a Zernike polynomial, is determined, wherein the Zernike polynomial is composed of only terms in which the order of variables related to a radius is second or lower order and includes one or more terms in which the order of the variables related to a radius is second-order; and the mask blank substrate, in which difference data (PV value) between the maximum value and the minimum value of difference shape between a virtual surface shape and a composite surface shape obtained by composing respective surface shapes of two main surfaces is 25 nm or less, is selected.
Abstract:
A method for inspecting a substrate having a plurality of holes formed on a plate-shaped material so as to extend over front and rear surfaces thereof. The method comprises picking-up an image of a plurality of holes formed on the substrate by imaging from one surface side of the substrate and obtaining a hole image of each hole (S103). Then, specifying a reference hole image of the plurality of holes from an imaging result obtained by the image acquisition step (S105). Thereafter, a similarity between each hole image, being the imaging result obtained by the image acquisition step is quantified and the reference hole image, is obtained by pattern matching processing using a specific correlative function (S105 to S107). Finally, a proper/improper hole shape of each of the plurality of holes is judged using a quantification result of each hole image obtained by the quantification step as an index (S108).
Abstract:
There is provided a substrate inspection method for inspecting a substrate having a plurality of holes formed on a plate-shaped material, including: an image acquisition step (S103) of picking-up an image of the holes formed on the substrate via an optical system including a microscope having an objective lens of a specific magnification, from one surface side of the substrate; a super resolution image processing step (S104) of obtaining a super resolution image corresponding to a picked-up image via an optical system including a microscope having an objective lens of higher magnification than the specific magnification, by applying super resolution image processing to the image obtained in the image acquisition step (S103); and an inspection step (S108) of inspecting a proper or improper hole formed on the substrate using the super resolution image obtained in the super resolution image processing step (S104).