公开(公告)号：US20130209925A1

公开(公告)日：2013-08-15

申请号：US13752694

申请日：2013-01-29

Applicant: HOYA CORPORATION

Inventor： Tatsuya SASAKI ,  Takahiro Miyazaki

IPC: G03F1/50 ,  G03F7/20

CPC classification number: G03F1/50 ,  B24B1/005 ,  B24B37/042 ,  C03C19/00 ,  G03F1/14 ,  G03F1/60 ,  G03F7/20

Abstract: In a mask blank substrate having two main surfaces and four end faces, a central point is set on the main surface, a first axis of symmetry that passes through the central point and that is parallel to one of the end faces and a second axis of symmetry that passes through the central point and that is perpendicular to the first axis are respectively set, measurement points are set in the form of a grid with respect to the first and the second axes so as to measure heights of the main surface from a reference plane at the measurement points, respectively, differences each between measured height values at those measurement points located at positions axisymmetric with respect to the first axis are calculated. Those differences corresponding to at least 95% of the total number of the calculated differences between the measured height values are within a predetermined value.

Abstract translation: 在具有两个主表面和四个端面的掩模坯料基板中，中心点设置在主表面上，第一对称轴线穿过中心点并平行于一个端面，第二轴线 分别设置穿过中心点并且垂直于第一轴线的对称性，测量点相对于第一和第二轴线以网格的形式设定，以便从参考点测量主表面的高度 在测量点处分别计算位于相对于第一轴线对称的位置处的测量点处的测量高度值之间的差异。 对应于所测量的高度值之间的计算差的总数的至少95％的那些差异在预定值内。

公开(公告)号：US20230132780A1

公开(公告)日：2023-05-04

申请号：US17972887

申请日：2022-10-25

Applicant: HOYA CORPORATION

Inventor： Tatsuya SASAKI ,  Masaru TANABE

IPC: G03F1/60 ,  G03F1/54 ,  G03F1/24

Abstract: [Problem to be Solved by the Disclosure]
Provided is a mask blank substrate.
[Means for Solving the Problem]
The mask blank substrate includes two opposing main surfaces, consists of a glass material containing SiO2 and TiO2, has a first region in one main surface side, the first region is a region within a 132 mm×104 mm square including a center portion in the one main surface and which is a region extending from the one main surface toward the other main surface up to a position of 500 μm in depth, an inner region of the substrate excluding the first region has a locally non-uniform portion, a ratio of Ti content rate to Si content rate (Ti/Si) of the non-uniform portion differs from Ti/Si of the inner region excluding the non-uniform portion by 0.25% or more, and the variation of Ti content rate in the inner region of the substrate excluding the first region and the non-uniform portion is 0.06 mass % or less.