公开(公告)号：US20170200693A1

公开(公告)日：2017-07-13

申请号：US15320835

申请日：2015-08-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Hiroshi OGURI ,  Akira SAKAMOTO ,  Tomoya TAGUCHI

IPC: H01L23/00 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/0203

CPC classification number: H01L24/73 ,  H01L23/12 ,  H01L23/15 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/103 ,  H01L2224/0347 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/2747 ,  H01L2224/28105 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29018 ,  H01L2224/29083 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/83444 ,  H01L2224/83469 ,  H01L2224/83815 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/0105 ,  H01L2924/00014

Abstract: An electronic component includes a base, a laminate of a plurality of conductive metal material layers, and a solder layer made of Au—Sn alloy solder. The laminate is disposed on the base. The solder layer is disposed on the laminate. The laminate includes a surface layer made of Au as the conductive metal material layer constituting an outermost layer. The surface layer includes a solder layer-disposing region in which the solder layer is disposed and a solder layer-empty region in which the solder layer is not disposed. The solder layer-disposing region and the solder layer-empty region are spatially separated from each other.

公开(公告)号：US20150171127A1

公开(公告)日：2015-06-18

申请号：US14627238

申请日：2015-02-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroshi OGURI ,  Yoshitaka ISHIKAWA ,  Akira SAKAMOTO ,  Tomoya TAGUCHI ,  Yoshimaro FUJII

IPC: H01L27/146 ,  H01L27/144

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions

Abstract translation: 边缘照明型光电二极管的制造方法具有：在半导体衬底中的器件形成区域的每一个中形成第一导电类型的杂质掺杂层的工序; 在每个器件形成区域中形成第二导电类型的杂质掺杂层的工艺; 在相邻的器件形成区域的边界的位置处，通过蚀刻从主表面形成在半导体衬底的厚度方向上延伸的沟槽的工艺，以暴露器件形成区域的侧面; 在器件形成区域的露出侧面上形成绝缘膜的工序; 在半导体衬底的主表面侧上形成用于每个对应的杂质掺杂层的电极的工艺; 以及将半导体衬底分离成单个器件形成区域的过程

公开(公告)号：US20140061840A1

公开(公告)日：2014-03-06

申请号：US14012273

申请日：2013-08-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroshi OGURI ,  Yoshitaka ISHIKAWA ,  Akira SAKAMOTO ,  Tomoya TAGUCHI ,  Yoshimaro FUJII

IPC: H01L31/0232

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions

Abstract translation: 边缘照明型光电二极管的制造方法具有：在半导体衬底中的器件形成区域的每一个中形成第一导电类型的杂质掺杂层的工序; 在每个器件形成区域中形成第二导电类型的杂质掺杂层的工艺; 在相邻的器件形成区域的边界的位置处，通过蚀刻从主表面形成在半导体衬底的厚度方向上延伸的沟槽的工艺，以暴露器件形成区域的侧面; 在器件形成区域的露出侧面上形成绝缘膜的工序; 在半导体衬底的主表面侧上形成用于每个对应的杂质掺杂层的电极的工艺; 以及将半导体衬底分离成单个器件形成区域的过程