公开(公告)号：US20150236151A1

公开(公告)日：2015-08-20

申请号：US14182765

申请日：2014-02-18

Applicant: GENERAL ELECTRIC COMPANY

Inventor： James Jay McMahon ,  Ljubisa Dragoljub Stevanovic ,  Stephen Daley Arthur ,  Thomas Bert Gorczyca ,  Richard Alfred Beaupre ,  Zachary Matthew Stum ,  Alexander Viktorovich Bolotnikov

IPC: H01L29/78 ,  H01L29/40 ,  H01L21/28 ,  H01L29/16

CPC classification number: H01L29/7827 ,  H01L21/045 ,  H01L21/049 ,  H01L21/28247 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7816

Abstract: A semiconductor device is presented. The device includes a semiconductor layer including silicon carbide, and having a first surface and a second surface. A gate insulating layer is disposed on a portion of the first surface of the semiconductor layer, and a gate electrode is disposed on the gate insulating layer. The device further includes an oxide disposed between the gate insulating layer and the gate electrode at a corner adjacent an edge of the gate electrode so as the gate insulating layer has a greater thickness at the corner than a thickness at a center of the layer. A method for fabricating the device is also provided.

Abstract translation: 介绍了半导体器件。 该器件包括具有碳化硅的半导体层，并具有第一表面和第二表面。 栅极绝缘层设置在半导体层的第一表面的一部分上，栅电极设置在栅极绝缘层上。 该器件还包括设置在栅极绝缘层和栅电极之间的邻近栅电极的边缘的角部处的氧化物，因此栅极绝缘层在角部具有比层的中心处的厚度更大的厚度。 还提供了一种用于制造该装置的方法。