公开(公告)号：US09397248B2

公开(公告)日：2016-07-19

申请号：US14291146

申请日：2014-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： JungWook Lim ,  Sun Jin Yun ,  Seong Hyun Lee

IPC: H01L31/02 ,  H01L31/054 ,  H01L31/0376 ,  H01L31/06 ,  H01L31/056

CPC classification number: H01L31/0549 ,  H01L31/03762 ,  H01L31/056 ,  H01L31/06 ,  Y02E10/52 ,  Y02E10/548

Abstract: A solar cell includes a first electrode; a lower light absorption layer disposed on the first electrode; an upper light absorption layer disposed on the lower light absorption layer; and an intermediate reflector layer provided between the lower light absorption layer and the upper light absorption layer, the intermediate reflector layer being comprised of copper oxide. The intermediate reflector layer includes a plurality of copper oxide layers including a lower copper oxide layer making contact with the lower light absorption layer, an upper copper oxide layer making contact with the upper light absorption layer, and an intermediate copper oxide layer provided between the lower copper oxide layer and the upper copper oxide layer. The plurality of copper oxide layers have respective oxygen amounts that gradually increase from the upper copper oxide layer to the lower copper oxide layer.

Abstract translation: 太阳能电池包括第一电极; 设置在所述第一电极上的下部光吸收层; 设置在下部光吸收层上的上部光吸收层; 以及设置在下部光吸收层和上部光吸收层之间的中间反射层，中间反射层由氧化铜构成。 中间反射层包括多个铜氧化物层，包括与下部光吸收层接触的下部氧化铜层，与上部光吸收层接触的上部氧化铜层，以及设置在下部光吸收层之间的中间氧化铜层 铜氧化物层和上部氧化铜层。 多个氧化铜层具有从上部氧化铜层向下部氧化铜层逐渐增加的氧量。

公开(公告)号：US10483300B2

公开(公告)日：2019-11-19

申请号：US15993765

申请日：2018-05-31

Applicant: Electronics and Telecommunications Research Institute

Inventor： JungWook Lim ,  Sun Jin Yun ,  Tae Yoon Kim ,  Jeho Na ,  Seong Hyun Lee ,  Kwang Hoon Jung

IPC: H01L27/144 ,  H01L31/113 ,  H01L31/0336 ,  G11C13/04 ,  H01L31/18 ,  G11C16/04 ,  G11C16/18 ,  H01L31/0296

Abstract: Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.

公开(公告)号：US20180350852A1

公开(公告)日：2018-12-06

申请号：US15993765

申请日：2018-05-31

Applicant: Electronics and Telecommunications Research Institute

Inventor： JungWook Lim ,  Sun Jin Yun ,  Tae Yoon Kim ,  Jeho Na ,  Seong Hyun Lee ,  Kwang Hoon Jung

IPC: H01L27/144 ,  H01L31/113 ,  H01L31/18 ,  H01L31/0336 ,  G11C13/04

CPC classification number: H01L27/1443 ,  G11C13/047 ,  G11C16/0466 ,  G11C16/18 ,  H01L27/1446 ,  H01L31/0296 ,  H01L31/0336 ,  H01L31/1136 ,  H01L31/18

Abstract: Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.

公开(公告)号：US12125907B2

公开(公告)日：2024-10-22

申请号：US17564688

申请日：2021-12-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Seong Hyun Lee ,  Dongwoo Suh ,  Sang Hoon Kim ,  Jeong Woo Park ,  Tae Moon Roh

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/7831 ,  H01L27/1203 ,  H01L29/42312 ,  H01L29/42316 ,  H01L29/4232 ,  H01L29/458 ,  H01L29/66484 ,  H01L29/66772

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.