公开(公告)号：US11500150B2

公开(公告)日：2022-11-15

申请号：US17173681

申请日：2021-02-11

Applicant: Electronics and Telecommunications Research Institute

Inventor： Joong-Seon Choe ,  Duk Jun Kim ,  Jong-Hoi Kim ,  Jonghyurk Park ,  Won Seok Han

IPC: G02B6/12 ,  G02B6/42 ,  G02B6/122

Abstract: Provided is a waveguide photodetector including a semiconductor substrate, a first optical waveguide and a second optical waveguide, which are sequentially laminated on the semiconductor substrate, in which each of the first optical waveguide and the second optical waveguide includes a first portion and a second portion, and the first portion extends from the second portion in a first direction parallel to a top surface of the semiconductor substrate, a refractive index matching layer disposed on the second portion of the second optical waveguide, a clad layer disposed on the refractive index matching layer, and an absorber disposed between the refractive index matching layer and the clad layer. Here, the second optical waveguide has a first conductive-type, the clad layer has a second conductive-type opposite to the first conductive-type, and the refractive index matching layer includes a first semiconductor layer that is an intrinsic semiconductor layer.

公开(公告)号：US09613984B2

公开(公告)日：2017-04-04

申请号：US14446394

申请日：2014-07-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jong-Heon Yang ,  Jonghyurk Park ,  Chunwon Byun ,  Chi-Sun Hwang

IPC: H01L27/12 ,  H01L27/14 ,  H01L27/146 ,  H01L27/32 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/14 ,  H01L27/14609 ,  H01L27/14689 ,  H01L27/32 ,  H01L27/3241 ,  H01L27/3244 ,  H01L29/66757

Abstract: Provided are a display device, a method of fabricating the display device, and a method of fabricating an image sensor device. The method of fabricating the display device includes preparing a substrate including a cell array area and a peripheral circuit area, forming a silicon layer on the peripheral circuit area of the substrate, forming oxide layers on the cell array area and the peripheral circuit area of the substrate, forming gate dielectric layers on the silicon layer and the oxide layers, forming the gate electrodes on the gate dielectric layers, wherein the gate electrodes expose both ends of the silicon layer and both ends of the oxide layers, and injecting dopant into both ends of the silicon layer and both ends of the oxide layers at the same time.

公开(公告)号：US08581235B2

公开(公告)日：2013-11-12

申请号：US13915851

申请日：2013-06-12

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jonghyurk Park ,  Seung Youl Kang

IPC: H01L29/06

CPC classification number: H01L29/7606 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/26513 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/66977 ,  H01L29/78696

Abstract: Provided are a resonance tunneling device and a method of manufacturing the resonance tunneling device. The resonance tunneling device includes a substrate, a plurality of electrodes disposed on the substrate, and a nanoparticle layer disposed between the electrodes, and doped with an impurity. The nanoparticle layer uses the impurity to exhibit resonance tunneling where a current peak occurs at a target bias voltage applied between the electrodes.

Abstract translation: 提供一种谐振隧穿装置及其制造方法。 谐振隧穿装置包括衬底，设置在衬底上的多个电极和设置在电极之间并掺杂杂质的纳米颗粒层。 纳米颗粒层使用杂质表现出谐振隧穿，其中在施加在电极之间的目标偏置电压发生电流峰值。