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公开(公告)号：US08975692B2
公开(公告)日：2015-03-10
申请号：US14100780
申请日：2013-12-09
Inventor： Sang Gi Kim , Jin-Gun Koo , Seong Wook Yoo , Jong-Moon Park , Jin Ho Lee , Kyoung Il Na , Yil Suk Yang , Jongdae Kim
CPC classification number: H01L29/7813 , H01L21/2255 , H01L29/0634 , H01L29/0653 , H01L29/1095 , H01L29/66727 , H01L29/66734 , H01L29/7811
Abstract: Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer.
Abstract translation: 提供半导体器件及其制造方法。 该方法包括：在第一导电类型的半导体衬底中形成沟槽; 在所述沟槽的侧壁和底表面上形成包含第二导电类型的掺杂剂的沟槽掺杂剂层; 通过将所述沟槽掺杂剂含量层中的掺杂剂扩散到所述半导体衬底中来形成掺杂区域; 并去除含沟槽掺杂剂层。
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Patent Agency Ranking
2.发明申请公开(公告)号：US20140152386A1
公开(公告)日：2014-06-05
申请号：US13841512
申请日：2013-03-15
Inventor： Yil Suk YANG , Jongdae Kim , Yong-Seo Koo
IPC: H03F3/45
CPC classification number: H03F3/45192 , H03F2203/45244 , H03F2203/45508
Abstract: Provided is an error amplifier. The error amplifier includes: an amplifying unit receiving first and second input signals and amplifying a voltage difference between the received first and second input signals; a first voltage generating unit generating first and second driving voltages for driving the amplifying unit; a second voltage generating unit generating first and second body voltages to implement a body biasing method; a cascode current source including first to fourth PMOS transistors to provide a bias current to the amplifying unit and the first voltage generating unit; and an output unit outputting a signal of the voltage difference amplified by the amplifying unit, wherein the first and third PMOS transistors receive the first body voltage through a body terminal and the second and fourth PMOS transistors receive the second body voltage through a body terminal.
Abstract translation: 提供了一个误差放大器。 误差放大器包括：放大单元，接收第一和第二输入信号并放大所接收的第一和第二输入信号之间的电压差; 产生用于驱动放大单元的第一和第二驱动电压的第一电压产生单元; 产生第一和第二体电压以实现身体偏置方法的第二电压产生单元; 共源共栅电流源，包括第一至第四PMOS晶体管，以向放大单元和第一电压产生单元提供偏置电流; 以及输出单元，输出由放大单元放大的电压差的信号，其中第一和第三PMOS晶体管通过主体端子接收第一体电压，并且第二和第四PMOS晶体管通过主体端子接收第二体电压。
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公开(公告)号：US10475782B2
公开(公告)日：2019-11-12
申请号：US15713121
申请日：2017-09-22
Applicant: Electronics and Telecommunications Research Institute , Industry-Academic Cooperation Foundation, Dankook University
Inventor： Jimin Oh , Yong-Seo Koo , Yil Suk Yang , Jongdae Kim
Abstract: Provided are an ESD protection diode and an electronic device including the same. An ESD protection diode and an electronic device including the same according to an embodiment of the inventive concept include first to fifth wells. The first well is connected to a first voltage terminal. The second well is connected to a second voltage terminal. The third well is connected to the input/output terminal. The fourth well is disposed between the first well and the third well, and the fifth well is disposed between the second well and the third well. The first to third wells are N-type wells, and the fourth and fifth wells are P-type wells. The first well includes a first N+ diffusion region and the second well includes a second N+ diffusion region. The fourth well includes a first P+ diffusion region and the fifth well includes a second P+ diffusion region. According to an embodiment of the inventive concept, an internal circuit is protected fro an ESD pulse applied to a plurality of terminals and holding voltage is increased.
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公开(公告)号：US08983090B2
公开(公告)日：2015-03-17
申请号：US13762300
申请日：2013-02-07
Inventor： Yi-Gyeong Kim , Min-Hyung Cho , Tae Moon Roh , Jong-Kee Kwon , Woo Seok Yang , Jongdae Kim
CPC classification number: H04R3/00 , H04R19/005 , H04R2201/003 , H04R2410/03
Abstract: An MEMS microphone is provided which includes a reference voltage/current generator configured to generate a DC reference voltage and a reference current; a first noise filter configured to remove a noise of the DC reference voltage; a voltage booster configured to generate a sensor bias voltage using the DC reference voltage the noise of which is removed; a microphone sensor configured to receive the sensor bias voltage and to generate an output value based on a variation in a sound pressure; a bias circuit configured to receive the reference current to generate a bias voltage; and a signal amplification unit configured to receive the bias voltage and the output value of the microphone sensor to amplify the output value. The first noise filter comprises an impedance circuit; a capacitor circuit connected to a output node of the impedance circuit; and a switch connected to both ends of the impedance circuit.
Abstract translation: 提供了一种MEMS麦克风，其包括被配置为产生DC参考电压和参考电流的参考电压/电流发生器; 第一噪声滤波器，被配置为去除所述DC参考电压的噪声; 升压器，被配置为使用其噪声被去除的直流参考电压来产生传感器偏置电压; 麦克风传感器，被配置为接收所述传感器偏置电压并且基于声压的变化产生输出值; 偏置电路，被配置为接收所述参考电流以产生偏置电压; 以及信号放大单元，被配置为接收麦克风传感器的偏置电压和输出值以放大输出值。 第一噪声滤波器包括阻抗电路; 连接到所述阻抗电路的输出节点的电容器电路; 以及连接到阻抗电路的两端的开关。
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公开(公告)号：US08896379B2
公开(公告)日：2014-11-25
申请号：US13841512
申请日：2013-03-15
Applicant: Electronics and Telecommunications Research Institute , Industry-Academic Cooperation Foundation, Dankook University
Inventor： Yil Suk Yang , Jongdae Kim , Yong-Seo Koo
IPC: H03F3/45
CPC classification number: H03F3/45192 , H03F2203/45244 , H03F2203/45508
Abstract: Provided is an error amplifier. The error amplifier includes: an amplifying unit receiving first and second input signals and amplifying a voltage difference between the received first and second input signals; a first voltage generating unit generating first and second driving voltages for driving the amplifying unit; a second voltage generating unit generating first and second body voltages to implement a body biasing method; a cascode current source including first to fourth PMOS transistors to provide a bias current to the amplifying unit and the first voltage generating unit; and an output unit outputting a signal of the voltage difference amplified by the amplifying unit, wherein the first and third PMOS transistors receive the first body voltage through a body terminal and the second and fourth PMOS transistors receive the second body voltage through a body terminal.
Abstract translation: 提供了一个误差放大器。 误差放大器包括：放大单元，接收第一和第二输入信号并放大所接收的第一和第二输入信号之间的电压差; 产生用于驱动放大单元的第一和第二驱动电压的第一电压产生单元; 产生第一和第二体电压以实现身体偏置方法的第二电压产生单元; 共源共栅电流源，包括第一至第四PMOS晶体管，以向放大单元和第一电压产生单元提供偏置电流; 以及输出单元，输出由放大单元放大的电压差的信号，其中第一和第三PMOS晶体管通过主体端子接收第一体电压，并且第二和第四PMOS晶体管通过主体端子接收第二体电压。
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公开(公告)号：US08722446B2
公开(公告)日：2014-05-13
申请号：US13796018
申请日：2013-03-12
Inventor： Jaewoo Lee , Chang Han Je , Woo Seok Yang , Jongdae Kim
IPC: H01L21/00
CPC classification number: H04R31/00 , H04R19/005 , H04R19/02
Abstract: Provided is an acoustic sensor. The acoustic sensor includes: a substrate including sidewall portions and a bottom portion extending from a bottom of the sidewall portions; a lower electrode fixed at the substrate and including a concave portion and a convex portion, the concave portion including a first hole on a middle region of the bottom, the convex portion including a second hole on an edge region of the bottom; diaphragms facing the concave portion of the lower electrode, with a vibration space therebetween; diaphragm supporters provided on the lower electrode at a side of the diaphragm and having a top surface having the same height as the diaphragm; and an acoustic chamber provided in a space between the bottom portion and the sidewall portions below the lower electrode.
Abstract translation: 提供了一种声学传感器。 声学传感器包括：基底，其包括侧壁部分和从侧壁部分的底部延伸的底部部分; 固定在所述基板上的下部电极，具有凹部和凸部，所述凹部包括在所述底部的中间区域的第一孔，所述凸部包括在所述底部的边缘区域上的第二孔; 隔膜面向下电极的凹部，其间具有振动空间; 隔膜支撑体设置在隔膜侧面的下电极上，具有与隔膜相同高度的顶表面; 以及设置在下部电极下方的底部和侧壁部之间的空间中的声学室。
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