公开(公告)号：US20180115101A1

公开(公告)日：2018-04-26

申请号：US15562559

申请日：2016-03-22

申请人： ENPLAS CORPORATION

发明人： Takahiro ODA

IPC分类号： H01R13/24 ,  H01R12/70 ,  H01R43/20 ,  H01R33/74

CPC分类号： H01R13/2435 ,  G01R1/073 ,  G01R31/26 ,  H01R12/7076 ,  H01R13/03 ,  H01R13/24 ,  H01R13/2485 ,  H01R33/74 ,  H01R33/76 ,  H01R43/20

摘要： An electric component socket in which a first electric component is housed in a first plate, a second plate is disposed to face the second electric component, a third plate is disposed at a middle position between the first and the second plates, and a plurality of electric contacts are used to electrically connect the first and second electric components, the electric contact includes: a spring part that is inserted into an insertion hole in the third plate; first and second contact parts extending from both terminals of the spring part, and inserted into insertion holes in the first and second plates to be in contact with electrodes of the first and second electric components.

公开(公告)号：US20180241142A1

公开(公告)日：2018-08-23

申请号：US15755040

申请日：2016-08-16

申请人： ENPLAS CORPORATION

发明人： Takahiro ODA

IPC分类号： H01R13/03 ,  G01R1/04 ,  G01R31/28

CPC分类号： H01R13/03 ,  C23C14/025 ,  C25D5/12 ,  C25D5/50 ,  C25D7/00 ,  G01R1/0458 ,  G01R1/06761 ,  G01R31/2875 ,  H01R2201/20

摘要： Contact pins are provided to a socket main body for accommodating an IC package so as to be in contact with connection terminals of the IC package accommodated in the socket main body. Each contact pin includes a conductive substrate and multiple layers laminated on the surface of the substrate, including: an underlying layer formed on the substrate by Ni plating; a first surface layer formed on the underlying layer by Pd—Ni alloy plating; a second surface layer formed on the first surface layer by Ni plating, thus allowing Sn from the corresponding connection terminal to diffuse into the second surface layer at a rate lower than into a conventional plated Ag layer; and an outermost surface layer formed on the second surface layer by Au plating to serve as an electrical contact layer.

公开(公告)号：US20180076590A1

公开(公告)日：2018-03-15

申请号：US15563297

申请日：2016-03-22

申请人： ENPLAS CORPORATION

发明人： Takahiro ODA

IPC分类号： H01R33/76 ,  H01R12/88 ,  H01R13/03 ,  H01R12/57 ,  G01R1/067 ,  G01R1/073 ,  G01R31/26

CPC分类号： H01R33/76 ,  G01R1/067 ,  G01R1/06722 ,  G01R1/073 ,  G01R31/26 ,  H01R12/57 ,  H01R12/88 ,  H01R13/03 ,  H01R13/24 ,  H01R13/2435

摘要： An electric contact having a contact resistance that is hardly increased even if the electric contact is repeatedly used for a long period of time. A base material of an electric contact is provided with a first contact part that is in contact with a first electrode of a first electric component, a second contact part that is in contact with a second electrode of a second electric component, and a spring part that presses the first contact part to the first electrode, and a wear-resistant contact point film is formed on a distal end portion of the first contact part. Furthermore, a highly conductive film is formed between a region of the wear-resistant contact point film and a distal end portion of the second contact part in the base material.

公开(公告)号：US20160285186A1

公开(公告)日：2016-09-29

申请号：US14778573

申请日：2014-03-13

申请人： ENPLAS CORPORATION

发明人： Takahiro ODA

IPC分类号： H01R13/03 ,  H01L21/66 ,  H01R13/20 ,  H01R12/71

CPC分类号： H01R13/03 ,  B32B15/01 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C23C18/1651 ,  C23C18/1653 ,  C25D5/10 ,  C25D5/12 ,  C25D7/00 ,  H01L22/34 ,  H01R12/7076 ,  H01R12/716 ,  H01R13/20

摘要： Contact pins are provided in a socket main body into which an IC package is accommodated and brought into electrical contact with connection terminals of the IC package. Each contact pin is formed of layers obtained by laminating an underlying layer containing Ni and a surface layer successively on a conductive base material. The surface layer includes a first layer on an underlying layer side, and a second layer in contact with the connection terminals. The first layer is formed of a plating layer of which a principal ingredient is a Pd—Ni alloy which is a material lower in diffusion speed of Sn than that of Pd, among materials into which Sn dissolves and diffuses by applying heat. The second layer is formed of a plating layer of which a principal ingredient is Ag which is a material lower in diffusion speed of Sn than that of the first layer.

摘要翻译： 接触销设置在容纳IC封装的插座主体中，并与IC封装的连接端子电接触。 每个接触针由通过在导电基材上依次层压含有Ni和表面层的下层而获得的层形成。 表面层包括在下层侧上的第一层和与连接端子接触的第二层。 第一层由主要成分为Pd-Ni合金的镀层形成，其中Sn是通过施加热而溶解并扩散的材料中Sn的扩散速度低于Pd的扩散速度的材料。 第二层由主要成分为Ag的镀层形成，其为Sn扩散速度低于第一层的扩散速度的材料。