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公开(公告)号：US10483300B2
公开(公告)日：2019-11-19
申请号：US15993765
申请日：2018-05-31
Inventor： JungWook Lim , Sun Jin Yun , Tae Yoon Kim , Jeho Na , Seong Hyun Lee , Kwang Hoon Jung
IPC: H01L27/144 , H01L31/113 , H01L31/0336 , G11C13/04 , H01L31/18 , G11C16/04 , G11C16/18 , H01L31/0296
Abstract: Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
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2.发明申请公开(公告)号：US20180350852A1
公开(公告)日：2018-12-06
申请号：US15993765
申请日：2018-05-31
Inventor： JungWook Lim , Sun Jin Yun , Tae Yoon Kim , Jeho Na , Seong Hyun Lee , Kwang Hoon Jung
IPC: H01L27/144 , H01L31/113 , H01L31/18 , H01L31/0336 , G11C13/04
CPC classification number: H01L27/1443 , G11C13/047 , G11C16/0466 , G11C16/18 , H01L27/1446 , H01L31/0296 , H01L31/0336 , H01L31/1136 , H01L31/18
Abstract: Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
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公开(公告)号：US20140007934A1
公开(公告)日：2014-01-09
申请号：US13867565
申请日：2013-04-22
Inventor： Sun Jin YUN , JungWook Lim
IPC: H01L31/0216
CPC classification number: H01L31/02167 , H01L31/02168 , H01L31/0749 , Y02E10/541
Abstract: A thin film solar cell according to the inventive concept includes a back side electrode on a substrate, a light absorption layer on the back side electrode, a buffer layer on the light absorption layer, a front side transparent electrode on the buffer layer, a grid electrode partially formed on the front side transparent electrode and exposing a top surface of a portion of the front side transparent electrode, and an anti-reflection layer covering the exposed top surface of the front side transparent electrode. The buffer layer includes titanium oxide (TiOx).
Abstract translation: 根据本发明构思的薄膜太阳能电池包括基板上的背面电极，背面电极上的光吸收层，光吸收层上的缓冲层，缓冲层上的前侧透明电极，栅格 部分地形成在前侧透明电极上并暴露前侧透明电极的一部分的顶表面的电极以及覆盖前侧透明电极的暴露的顶表面的防反射层。 缓冲层包括氧化钛（TiOx）。
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公开(公告)号：US12183835B2
公开(公告)日：2024-12-31
申请号：US17903149
申请日：2022-09-06
Inventor： JungWook Lim
IPC: H01L29/84
Abstract: Provided is a synaptic device including a substrate, a channel layer on the substrate, a gate dielectric layer on the channel layer; and a gate electrode on the gate dielectric layer, wherein the gate dielectric layer includes a charge supply dielectric film and a piezoelectric film, wherein the charge supply dielectric film includes a metal oxide or metal sulfide, wherein the piezoelectric film includes a piezoelectric material that converts a pressure stimulation into an electrical signal, wherein accordance to a change in a signal applied to the gate electrode, a magnitude and aspect of a current flowing through the channel layer are changed.
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公开(公告)号：US09257579B2
公开(公告)日：2016-02-09
申请号：US13952904
申请日：2013-07-29
Inventor： Sun Jin Yun , Chang Bong Yeon , Yoo Jeong Lee , JungWook Lim
IPC: H01L31/056 , H01L31/0232 , H01L31/18 , H01L31/0224 , H01L31/0236 , H01L51/52 , H01L33/40 , H01L21/00
CPC classification number: H01L29/43 , H01L29/423 , H01L31/0224 , H01L31/022425 , H01L31/02327 , H01L31/02366 , H01L31/056 , H01L31/1884 , H01L33/40 , H01L33/405 , H01L51/5203 , H01L51/5209 , H01L2933/0016 , Y02E10/52
Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.
Abstract translation: 提供一种制造电子设备的方法。 根据本发明构思的方法可以包括形成具有平坦部分的下电极和在基板上的突起，在下电极上形成中间层，并在中间层上形成上电极。 下电极的形成可以包括通过在基板上沉积第一金属形成导电膜，并在导电膜上沉积第二金属以制备第一金属和第二金属的合金。
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Patent Agency Ranking
公开(公告)号：US20150263189A1
公开(公告)日：2015-09-17
申请号：US14727936
申请日：2015-06-02
Inventor： Sun Jin YUN , JungWook Lim
IPC: H01L31/0216
CPC classification number: H01L31/02168 , B05D5/02 , B05D2601/20 , B05D2601/22 , C03C17/007 , C03C2217/45 , C03C2217/475 , C03C2217/478 , C03C2217/732 , C03C2217/77 , G02B5/0226 , H01L31/02327 , Y02E10/50 , Y10T428/24372 , Y10T428/24893
Abstract: Provided embodiments are a thin film including a support material and nano particles having different density from that of the support material, and a method for manufacturing the same. Due to the density difference, the nano particles are intensively concentrated on an upper or lower part of the support material. The inventive concept also discloses a thin film capable of increasing surface roughness and a method for manufacturing the same. The thin film includes a support material, and particles contained therein. The particles may have lower density than that of the support material, and increase surface roughness at an upper part of the support material.
Abstract translation: 所提供的实施方案是包括支撑材料和与载体材料的密度不同的纳米颗粒的薄膜及其制造方法。 由于密度差异，纳米颗粒集中在载体材料的上部或下部。 本发明的概念还公开了一种能够增加表面粗糙度的薄膜及其制造方法。 薄膜包括载体材料和其中所含的颗粒。 颗粒的密度可以低于支撑材料的密度，并且增加了支撑材料上部的表面粗糙度。
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公开(公告)号：US10811254B2
公开(公告)日：2020-10-20
申请号：US16047871
申请日：2018-07-27
Inventor： Sun Jin Yun , JungWook Lim , Kwang Hoon Jung , Hyun Jun Chai
IPC: H01L21/02 , C23C16/56 , H01L21/56 , C23C16/30 , C23C16/455 , H01L29/24 , C23C14/18 , H01L29/66 , C23C14/58 , C23C14/06 , H01L29/786 , H01L29/778
Abstract: Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.
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公开(公告)号：US10580714B2
公开(公告)日：2020-03-03
申请号：US16175284
申请日：2018-10-30
Inventor： Sun Jin Yun , Junjae Yang , Changbong Yeon , JungWook Lim
Abstract: Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.
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公开(公告)号：US10153141B2
公开(公告)日：2018-12-11
申请号：US14621739
申请日：2015-02-13
Inventor： Sun Jin Yun , Kyu Sung Lee , JungWook Lim
Abstract: Provided is an apparatus for monitoring a gas and plasma process equipment including the same. The apparatus includes: a housing including a gas inflow hole, a gas discharge hole, and windows; a light source disposed adjacent to one of the windows outside the housing to provide source light to a gas supplied between the gas inflow hole and the gas discharge hole; a sensor disposed adjacent to the other of the windows outside the housing to detect fluorescence emitted from the gas by the source light; and a coil disposed in the housing between the gas inflow hole and the gas discharge hole to heat and decompose the gas between the light source and the sensor, thereby increasing the fluorescence emitted from the gas.
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公开(公告)号：US09397248B2
公开(公告)日：2016-07-19
申请号：US14291146
申请日：2014-05-30
Inventor： JungWook Lim , Sun Jin Yun , Seong Hyun Lee
IPC: H01L31/02 , H01L31/054 , H01L31/0376 , H01L31/06 , H01L31/056
CPC classification number: H01L31/0549 , H01L31/03762 , H01L31/056 , H01L31/06 , Y02E10/52 , Y02E10/548
Abstract: A solar cell includes a first electrode; a lower light absorption layer disposed on the first electrode; an upper light absorption layer disposed on the lower light absorption layer; and an intermediate reflector layer provided between the lower light absorption layer and the upper light absorption layer, the intermediate reflector layer being comprised of copper oxide. The intermediate reflector layer includes a plurality of copper oxide layers including a lower copper oxide layer making contact with the lower light absorption layer, an upper copper oxide layer making contact with the upper light absorption layer, and an intermediate copper oxide layer provided between the lower copper oxide layer and the upper copper oxide layer. The plurality of copper oxide layers have respective oxygen amounts that gradually increase from the upper copper oxide layer to the lower copper oxide layer.
Abstract translation: 太阳能电池包括第一电极; 设置在所述第一电极上的下部光吸收层; 设置在下部光吸收层上的上部光吸收层; 以及设置在下部光吸收层和上部光吸收层之间的中间反射层，中间反射层由氧化铜构成。 中间反射层包括多个铜氧化物层，包括与下部光吸收层接触的下部氧化铜层，与上部光吸收层接触的上部氧化铜层，以及设置在下部光吸收层之间的中间氧化铜层 铜氧化物层和上部氧化铜层。 多个氧化铜层具有从上部氧化铜层向下部氧化铜层逐渐增加的氧量。
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