公开(公告)号：US09257579B2

公开(公告)日：2016-02-09

申请号：US13952904

申请日：2013-07-29

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sun Jin Yun ,  Chang Bong Yeon ,  Yoo Jeong Lee ,  JungWook Lim

IPC: H01L31/056 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L51/52 ,  H01L33/40 ,  H01L21/00

CPC classification number: H01L29/43 ,  H01L29/423 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/1884 ,  H01L33/40 ,  H01L33/405 ,  H01L51/5203 ,  H01L51/5209 ,  H01L2933/0016 ,  Y02E10/52

Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.

Abstract translation: 提供一种制造电子设备的方法。 根据本发明构思的方法可以包括形成具有平坦部分的下电极和在基板上的突起，在下电极上形成中间层，并在中间层上形成上电极。 下电极的形成可以包括通过在基板上沉积第一金属形成导电膜，并在导电膜上沉积第二金属以制备第一金属和第二金属的合金。