公开(公告)号：US20190103483A1

公开(公告)日：2019-04-04

申请号：US16137235

申请日：2018-09-20

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hokyun AHN ,  Min Jeong SHIN ,  Jeong Jin KIM ,  Hae Cheon KIM ,  Jae Won DO ,  Byoung-Gue MIN ,  Hyung Sup YOON ,  Hyung Seok LEE ,  Jong-Won LIM ,  Sungjae CHANG ,  Hyunwook JUNG ,  Kyu Jun CHO ,  Dong Min KANG ,  Dong-Young KIM ,  SEONG-IL KIM ,  Sang-Heung LEE ,  Jongmin LEE ,  Hong Gu JI

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/45 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L21/3065

Abstract: Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.