公开(公告)号：US20230258848A1

公开(公告)日：2023-08-17

申请号：US18091221

申请日：2022-12-29

Applicant: California Institute of Technology

Inventor： Taeyoon JEON ,  Axel SCHERER ,  Jack JEWELL

IPC: G02B5/08 ,  G02B1/113

CPC classification number: G02B5/0875 ,  G02B1/113 ,  G02B5/0883

Abstract: An optical-thin-film structure comprises a low-index optical thin film consisting essentially of co-deposited Barium Fluoride and a secondary fluoride compound, and a high-index optical thin film.

公开(公告)号：US20240377279A1

公开(公告)日：2024-11-14

申请号：US18660616

申请日：2024-05-10

Applicant: California Institute of Technology

Inventor： Axel SCHERER ,  Taeyoon JEON ,  Changsoon CHOI ,  Peter A PETILLO ,  Jack JEWELL ,  John Richard ORDONEZ-VARELA

IPC: G01M3/38 ,  G06V10/88

Abstract: A leak-detection system comprises networked imaging packages including an infrared camera based on microbolometer arrays, one or more filters, and a processor. The processor uses one or more novel processing methods for identifying gas leakages in a monitored facility. In some embodiments, the imaging packages are installed at various locations in the monitored facility. In some other embodiments, the leak-detection system is embodied as a mobile platform, wherein the networked imaging packages are coupled to drones that fly throughout the monitored facility to monitor for gas leakages. The flight path of the cameras may be pre-programmed and may further be alterable in real time. The novel processing technique(s) employed by the leak-detection system disclosed herein involve the use of multiple unique filters that facilitate enhancing the signal-to-noise ratio of captured images; that is, enhancing the contrast of a monitored gas against other objects. The novel processing techniques include one or more of the following: (i) two-image subtraction; (ii) time-resolved imaging; and (iii) multi-filter detection. Additionally, in some embodiments, the imaging packages include a visible (light) camera in addition to an IR camera.

公开(公告)号：US20240295440A1

公开(公告)日：2024-09-05

申请号：US18661379

申请日：2024-05-10

Applicant: California Institute of Technology

Inventor： Axel SCHERER ,  Paromita MITCHELL ,  John Richard ORDONEZ-VARELA ,  Jack JEWELL

IPC: G01J5/24 ,  G01J5/00 ,  G01J5/08 ,  G01J5/20 ,  G01J5/48

CPC classification number: G01J5/24 ,  G01J5/0896 ,  G01J5/485 ,  G01J2005/0077 ,  G01J2005/204

Abstract: A temperature monitoring system includes a semiconductor member mounted onto the surface of an object having a surface whose temperature is to be monitored. The semiconductor member has a temperature-dependent bandgap with an absorption edge that varies with temperature. A light source is configured to illuminate the semiconductor member with monochromatic light. The monochromatic light has a wavelength equal to an absorption edge wavelength that is associated with the absorption edge when the semiconductor member is at a specified temperature. An imaging device is configured to receive light reflected from the semiconductor member when illuminated with the monochromatic light such that a surface temperature of the object is at the specified temperature when a change in an amount of reflected light that is received indicates that the wavelength of the monochromatic light is equal to the absorption edge wavelength at the specified temperature.

公开(公告)号：US20240110837A1

公开(公告)日：2024-04-04

申请号：US18376582

申请日：2023-10-04

Applicant: California Institute of Technology ,  TotalEnergies OneTech

Inventor： Axel SCHERER ,  Jack JEWELL ,  John Richard ORDONEZ-VARELA ,  Paromita MITCHELL

IPC: G01K11/125

CPC classification number: G01K11/125

Abstract: A temperature monitoring system includes a semiconductor member mounted onto the surface of an object having a surface whose temperature is to be monitored. The semiconductor member has a temperature-dependent bandgap with an absorption edge that varies with temperature. A light source is configured to illuminate the semiconductor member with monochromatic light. The monochromatic light has a wavelength equal to an absorption edge wavelength that is associated with the absorption edge when the semiconductor member is at a specified temperature. A detector is configured to receive light reflected from the semiconductor member when illuminated with the monochromatic light such that a surface temperature of the object is at the specified temperature when a change in an amount of reflected light that is received indicates that the wavelength of the monochromatic light is equal to the absorption edge wavelength at the specified temperature.