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    FLOW CONTROL FEATURES OF CVD CHAMBERS
    3.
    发明申请
    FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开

    公开(公告)号：US20200149166A1

    公开(公告)日：2020-05-14

    申请号：US16745141

    申请日：2020-01-16

    Applicant: Applied Materials, Inc.

    Inventor： Kien N. CHUC ,  Qiwei LIANG ,  Hanh D. NGUYEN ,  Xinglong CHEN ,  Matthew MILLER ,  Soonam PARK ,  Toan Q. TRAN ,  Adib M. KHAN ,  Jang-Gyoo YANG ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN

    IPC: C23C16/455 ,  H01J37/32 ,  C23C16/452

    Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    APPARATUS WITH CONCENTRIC PUMPING FOR MULTIPLE PRESSURE REGIMES
    4.
    发明申请
    APPARATUS WITH CONCENTRIC PUMPING FOR MULTIPLE PRESSURE REGIMES 审中-公开

    公开(公告)号：US20180233327A1

    公开(公告)日：2018-08-16

    申请号：US15433008

    申请日：2017-02-15

    Applicant: Applied Materials, Inc.

    Inventor： Nikolai Nikolaevich KALNIN ,  Toan Q. TRAN ,  Dmitry LUBOMIRSKY

    IPC: H01J37/32 ,  H01L21/67 ,  C23C14/56 ,  C23C14/54 ,  C23C14/50 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52

    Abstract: An exhaust module for a substrate processing apparatus having a body, a pumping ring, and a symmetric flow valve, is disclosed herein. The body has a first and second vacuum pump opening formed therethrough. The pumping ring is positioned in the body over both the first and second vacuum pump openings. The pumping ring includes a substantially ring shaped body having a top surface, a bottom surface, and an opening. The top surface has one or more through holes formed therein, arranged in a pattern concentric with the first vacuum pump opening. The bottom surface has a fluid passage formed therein, interconnecting each of the one or more through holes. The opening is formed in the substantially ring shaped body, substantially aligned with the vacuum pump opening. The symmetric flow valve is positioned in the body over the pumping ring and movable between a raised position and a lowered position.

    PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING
    5.
    发明申请
    PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING 审中-公开
    循环过程室和选择性材料的去除和蚀刻

    公开(公告)号：US20170069466A1

    公开(公告)日：2017-03-09

    申请号：US14994425

    申请日：2016-01-13

    Applicant: Applied Materials, Inc.

    Inventor： Toan Q. TRAN ,  Soonam PARK ,  Junghoon KIM ,  Dmitry LUBOMIRSKY

    IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67

    CPC classification number: H01J37/32357 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/311 ,  H01L21/67069 ,  H01L21/6831

    Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

    Abstract translation: 本文描述了用于衬底蚀刻的方法和设备。 本文所述的处理室包括源模块，处理模块，流模块和排气模块。 RF源可以耦合到腔室，并且可以在源模块中产生远程等离子体，并且可以在过程模块中产生直接等离子体。 所描述的循环蚀刻工艺可以使用交替的自由基和直接等离子体蚀刻衬底。

    FLOW CONTROL FEATURES OF CVD CHAMBERS
    6.
    发明申请
    FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
    CVD气泡流量控制特征

    公开(公告)号：US20150013793A1

    公开(公告)日：2015-01-15

    申请号：US14481774

    申请日：2014-09-09

    Applicant: Applied Materials, Inc.

    Inventor： Kien N. CHUC ,  Qiwei LIANG ,  Hanh D. NGUYEN ,  Xinglong CHEN ,  Matthew MILLER ,  Soonam PARK ,  Toan Q. TRAN ,  Adib KHAN ,  Jang-Gyoo YANG ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN

    IPC: C23C16/455

    CPC classification number: C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/85938

    Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    Abstract translation: 提供了用于气体分配组件的装置和方法。 一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成 位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体 通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个 第三孔。

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