公开(公告)号：US20250132147A1

公开(公告)日：2025-04-24

申请号：US18922507

申请日：2024-10-22

Applicant: Applied Materials, Inc.

Inventor： Jae Young PARK ,  Wei LIU ,  Minghang LI ,  Moon Hee SEO ,  Dileep Venkata Sai VADLADI ,  Sahil TAHILIANI ,  Sandip NIYOGI ,  Dimitrios PAVLOPOULOS ,  Amit JAIN ,  Vladimir NAGORNY ,  Victor CALDERON ,  Edric TONG ,  Rene GEORGE

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: Implementations described herein relate to systems and methods treating high-k materials for use in forming MIM capacitors. Including various high-density plasma nitridation processes or combinations of high-density plasma oxidation processes and high-density plasma nitridation processes are provided.

公开(公告)号：US20240304422A1

公开(公告)日：2024-09-12

申请号：US18668480

申请日：2024-05-20

Applicant: Applied Materials, Inc.

Inventor： Sandip NIYOGI ,  Wei LIU ,  Dileep Venkata Sai VADLADI ,  Lily HUANG

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/0228 ,  H01J2237/334

Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, a plasma processing method includes introducing a gas including helium and nitrogen into a gas injection channel of a plasma source. The method includes generating a plasma within the gas injection channel. The plasma includes helium radicals and nitrogen radicals. The method includes delivering the plasma from the plasma source to a process chamber including a substrate. The method includes producing a treated substrate by processing the substrate with the plasma within the process chamber, in which processing the substrate includes contacting the plasma including the helium radicals and nitrogen radicals with a first side of the substrate.