公开(公告)号：US20210249239A1

公开(公告)日：2021-08-12

申请号：US17167469

申请日：2021-02-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Naman APURVA ,  Lara A. HAWRYLCHAK ,  Mahesh RAMAKRISHNA ,  Sriharish SRINIVASAN ,  Prashant AGARWAL

IPC: H01J37/32 ,  H01L21/67

Abstract: Embodiments of exhaust liner systems are provided herein. In some embodiments, an exhaust liner system for use in a process chamber includes a lower exhaust liner having an annular body with a central opening; an upper flange, a central flange, and a lower flange extending outward from the annular body, wherein the lower flange and the central flange partially define a first plenum, and wherein the central flange and the upper flange partially define a second plenum; a plurality of exhaust holes from the central opening to the first plenum; and at least one cutout in the central flange to provide a flow path from the first plenum to the second plenum, wherein the lower exhaust liner defines a gas flow path from the central opening to the first plenum via the plurality of exhaust holes and from the first plenum to the second plenum via the least one cutout.

公开(公告)号：US20240290585A1

公开(公告)日：2024-08-29

申请号：US18113509

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Eric R. RIESKE ,  Victor CALDERON ,  Mahesh RAMAKRISHNA ,  Michael P. KAMP ,  Dongming IU ,  Edward T. XIA ,  Eric T. TRAN

IPC: H01J37/32 ,  H01L21/768

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/76886 ,  H01J37/32357 ,  H01J37/32743 ,  H01J2237/1825 ,  H01J2237/336

Abstract: A method of post-deposition processing includes performing a preheat process in a radical treatment chamber, the preheat process comprising exposing a substrate having a metal layer formed thereon to purge gas and purging the purge gas at a pressure of between 400 Torr and 535 Torr, and performing a radical treatment process in the radical treatment chamber, the radical treatment process comprising exposing the substrate to radical species.

公开(公告)号：US20240055265A1

公开(公告)日：2024-02-15

申请号：US17886269

申请日：2022-08-11

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Zhiming JIANG ,  Jingmin LENG ,  Victor CALDERON ,  Mahesh RAMAKRISHNA

IPC: H01L21/3065 ,  H01L21/67 ,  H01L29/66 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01L21/67207 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/6653 ,  H01L29/66553 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01L29/42392

Abstract: A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate includes positioning the substrate in a processing volume of a first processing chamber, the substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate further includes heating the substrate to a first temperature of more than about 250 degrees Celsius, generating hydrogen radicals using a remote plasma source fluidly coupled with the processing volume, and maintaining the substrate at the first temperature while concurrently exposing the one or more silicon nanosheets to the generated hydrogen radicals. The generated hydrogen radicals remove residual germanium from the one or more silicon nanosheets.

公开(公告)号：US20180269089A1

公开(公告)日：2018-09-20

申请号：US15461952

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Niraj MERCHANT ,  Lara HAWRYLCHAK ,  Mehran BEHDJAT ,  Dietrich GAGE ,  Christopher DAO ,  Binh NGUYEN ,  Michael P. KAMP ,  Mahesh RAMAKRISHNA

IPC: H01L21/67 ,  G01J5/34 ,  G01J5/00 ,  G01R35/00 ,  H05B1/02 ,  H05B3/00 ,  H01L21/66

Abstract: Embodiments of the disclosure relate to methods for measuring temperature and a tool for calibrating temperature control of a substrate support in a processing chamber without contact with a surface of the substrate support. In one embodiment, a test fixture with a temperature sensor is removably mounted to an upper surface of a chamber body of the processing chamber such that the temperature sensor has a field of view including an area of the substrate support that is adjacent to a resistive coil disposed in the substrate support. One or more calibration temperature measurements of the area of the substrate support are taken by the temperature sensor and simultaneously one or more calibration resistance measurements of the resistive coil are taken corresponding to each calibration temperature measurement. Temperature control of a heating element disposed in the substrate support is calibrated based on the calibration temperature and calibration resistance measurements.