公开(公告)号：US20240290585A1

公开(公告)日：2024-08-29

申请号：US18113509

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Eric R. RIESKE ,  Victor CALDERON ,  Mahesh RAMAKRISHNA ,  Michael P. KAMP ,  Dongming IU ,  Edward T. XIA ,  Eric T. TRAN

IPC: H01J37/32 ,  H01L21/768

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/76886 ,  H01J37/32357 ,  H01J37/32743 ,  H01J2237/1825 ,  H01J2237/336

Abstract: A method of post-deposition processing includes performing a preheat process in a radical treatment chamber, the preheat process comprising exposing a substrate having a metal layer formed thereon to purge gas and purging the purge gas at a pressure of between 400 Torr and 535 Torr, and performing a radical treatment process in the radical treatment chamber, the radical treatment process comprising exposing the substrate to radical species.