公开(公告)号：US20230128128A1

公开(公告)日：2023-04-27

申请号：US17569238

申请日：2022-01-05

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Dongming IU ,  Shashank SHARMA ,  Eric R. RIESKE ,  Michael P. KAMP

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/321

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

公开(公告)号：US20240290585A1

公开(公告)日：2024-08-29

申请号：US18113509

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Eric R. RIESKE ,  Victor CALDERON ,  Mahesh RAMAKRISHNA ,  Michael P. KAMP ,  Dongming IU ,  Edward T. XIA ,  Eric T. TRAN

IPC: H01J37/32 ,  H01L21/768

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/76886 ,  H01J37/32357 ,  H01J37/32743 ,  H01J2237/1825 ,  H01J2237/336

Abstract: A method of post-deposition processing includes performing a preheat process in a radical treatment chamber, the preheat process comprising exposing a substrate having a metal layer formed thereon to purge gas and purging the purge gas at a pressure of between 400 Torr and 535 Torr, and performing a radical treatment process in the radical treatment chamber, the radical treatment process comprising exposing the substrate to radical species.

公开(公告)号：US20240178004A1

公开(公告)日：2024-05-30

申请号：US18437058

申请日：2024-02-08

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Dongming IU ,  Shashank SHARMA ,  Eric R. RIESKE ,  Michael P. KAMP

IPC: H01L21/324 ,  H01L21/321 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01L21/321 ,  H01L21/67098 ,  H01L21/67201

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

公开(公告)号：US20240055265A1

公开(公告)日：2024-02-15

申请号：US17886269

申请日：2022-08-11

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Zhiming JIANG ,  Jingmin LENG ,  Victor CALDERON ,  Mahesh RAMAKRISHNA

IPC: H01L21/3065 ,  H01L21/67 ,  H01L29/66 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01L21/67207 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/6653 ,  H01L29/66553 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01L29/42392

Abstract: A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate includes positioning the substrate in a processing volume of a first processing chamber, the substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate further includes heating the substrate to a first temperature of more than about 250 degrees Celsius, generating hydrogen radicals using a remote plasma source fluidly coupled with the processing volume, and maintaining the substrate at the first temperature while concurrently exposing the one or more silicon nanosheets to the generated hydrogen radicals. The generated hydrogen radicals remove residual germanium from the one or more silicon nanosheets.