公开(公告)号：US20230128128A1

公开(公告)日：2023-04-27

申请号：US17569238

申请日：2022-01-05

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Dongming IU ,  Shashank SHARMA ,  Eric R. RIESKE ,  Michael P. KAMP

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/321

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

公开(公告)号：US20240290585A1

公开(公告)日：2024-08-29

申请号：US18113509

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Eric R. RIESKE ,  Victor CALDERON ,  Mahesh RAMAKRISHNA ,  Michael P. KAMP ,  Dongming IU ,  Edward T. XIA ,  Eric T. TRAN

IPC: H01J37/32 ,  H01L21/768

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/76886 ,  H01J37/32357 ,  H01J37/32743 ,  H01J2237/1825 ,  H01J2237/336

Abstract: A method of post-deposition processing includes performing a preheat process in a radical treatment chamber, the preheat process comprising exposing a substrate having a metal layer formed thereon to purge gas and purging the purge gas at a pressure of between 400 Torr and 535 Torr, and performing a radical treatment process in the radical treatment chamber, the radical treatment process comprising exposing the substrate to radical species.

公开(公告)号：US20240178004A1

公开(公告)日：2024-05-30

申请号：US18437058

申请日：2024-02-08

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Dongming IU ,  Shashank SHARMA ,  Eric R. RIESKE ,  Michael P. KAMP

IPC: H01L21/324 ,  H01L21/321 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01L21/321 ,  H01L21/67098 ,  H01L21/67201

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

公开(公告)号：US20180269089A1

公开(公告)日：2018-09-20

申请号：US15461952

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Niraj MERCHANT ,  Lara HAWRYLCHAK ,  Mehran BEHDJAT ,  Dietrich GAGE ,  Christopher DAO ,  Binh NGUYEN ,  Michael P. KAMP ,  Mahesh RAMAKRISHNA

IPC: H01L21/67 ,  G01J5/34 ,  G01J5/00 ,  G01R35/00 ,  H05B1/02 ,  H05B3/00 ,  H01L21/66

Abstract: Embodiments of the disclosure relate to methods for measuring temperature and a tool for calibrating temperature control of a substrate support in a processing chamber without contact with a surface of the substrate support. In one embodiment, a test fixture with a temperature sensor is removably mounted to an upper surface of a chamber body of the processing chamber such that the temperature sensor has a field of view including an area of the substrate support that is adjacent to a resistive coil disposed in the substrate support. One or more calibration temperature measurements of the area of the substrate support are taken by the temperature sensor and simultaneously one or more calibration resistance measurements of the resistive coil are taken corresponding to each calibration temperature measurement. Temperature control of a heating element disposed in the substrate support is calibrated based on the calibration temperature and calibration resistance measurements.