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公开(公告)号：US09484739B2
公开(公告)日：2016-11-01
申请号：US14496839
申请日：2014-09-25
Applicant: ANALOG DEVICES GLOBAL
Inventor： Edward John Coyne , John Twomey , Seamus P. Whiston , David J. Clarke , Donal P. McAuliffe , William Allan Lane , Stephen Denis Heffernan , Brian A. Moane , Brian Michael Sweeney , Patrick Martin McGuinness
CPC classification number: H02H9/044 , H01L27/0259 , H02H7/16
Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.
Abstract translation: 提供一种保护装置，其展现了一纳秒或更少的转动时间。 这样一种器件为集成电路提供了防止静电放电事件的增强保护。 这反过来又降低了使用设备故障的风险。 保护装置可以包括连接在要保护的节点和放电路径之间的双极晶体管结构。
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公开(公告)号：US10101414B2
公开(公告)日：2018-10-16
申请号：US15000006
申请日：2016-01-18
Applicant: Analog Devices Global
Inventor： Jan Kubik , Seamus P. Whiston , Padraig Michael Doran
Abstract: Thin film resistive sensors typically include a number of resistive components. These components should be well matched in order for the sensor to provide accurate readings. When a sensor is incorporated within an integrated circuit, the resistive components may be formed over, or under, metallic traces that form part of other components. As a result, the thin film resistive components are subjected to different levels of stress. This disclosure provides a structure that is arranged to mitigate the effects of stress.
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Patent Agency Ranking
3.发明申请公开(公告)号：US20170131368A1
公开(公告)日：2017-05-11
申请号：US15000006
申请日：2016-01-18
Applicant: Analog Devices Global
Inventor： Jan Kubik , Seamus P. Whiston , Padraig Michael Doran
IPC: G01R33/09
CPC classification number: G01R33/09 , G01R33/096
Abstract: Thin film resistive sensors typically include a number of resistive components. These components should be well matched in order for the sensor to provide accurate readings. When a sensor is incorporated within an integrated circuit, the resistive components may be formed over, or under, metallic traces that form part of other components. As a result, the thin film resistive components are subjected to different levels of stress. This disclosure provides a structure that is arranged to mitigate the effects of stress.
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4.发明授权Semiconductor device, and a method of improving breakdown voltage of a semiconductor device 有权半导体装置以及提高半导体装置的击穿电压的方法公开(公告)号：US09252260B2
公开(公告)日：2016-02-02
申请号：US13939556
申请日：2013-07-11
Applicant: ANALOG DEVICES GLOBAL
Inventor： Edward John Coyne , Breandan Pol Og O hAnnaidh , Seamus P. Whiston , William Allan Lane , Donai P. McAuliffe
CPC classification number: H01L29/78 , H01L29/063 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/42368 , H01L29/66477 , H01L29/66681 , H01L29/7824
Abstract: A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.
Abstract translation: 一种半导体器件，其具有与半导体层相邻的第一层，并且还包括至少一个场修改结构，其定位使得在使用中，场修改结构处的电位在半导体的界面区域处引起E场矢量 和要修改的第一层。
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公开(公告)号：US10468484B2
公开(公告)日：2019-11-05
申请号：US14284148
申请日：2014-05-21
Applicant: ANALOG DEVICES GLOBAL
Inventor： Edward John Coyne , William Allan Lane , Seamus P. Whiston
IPC: H01L29/08 , H01L29/732 , H01L29/45 , H01L29/10 , H01L29/423 , H01L29/66 , H01L29/06
Abstract: A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.
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公开(公告)号：US20160094026A1
公开(公告)日：2016-03-31
申请号：US14496839
申请日：2014-09-25
Applicant: ANALOG DEVICES GLOBAL
Inventor： Edward John Coyne , John Twomey , Seamus P. Whiston , David J. Clarke , Donal P. McAuliffe , William Allan Lane , Stephen Denis Heffernan , Brian A. Moane , Brian Michael Sweeney , Patrick Martin McGuinness
CPC classification number: H02H9/044 , H01L27/0259 , H02H7/16
Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.
Abstract translation: 提供一种保护装置，其展现了一纳秒或更少的转动时间。 这样一种器件为集成电路提供了防止静电放电事件的增强保护。 这反过来又降低了使用设备故障的风险。 保护装置可以包括连接在要保护的节点和放电路径之间的双极晶体管结构。
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公开(公告)号：US20150340440A1
公开(公告)日：2015-11-26
申请号：US14284148
申请日：2014-05-21
Applicant: ANALOG DEVICES GLOBAL
Inventor： Edward John Coyne , William Allan Lane , Seamus P. Whiston
IPC: H01L29/08 , H01L29/417 , H01L29/10 , H01L29/732 , H01L29/45
CPC classification number: H01L29/0821 , H01L29/0649 , H01L29/1004 , H01L29/42304 , H01L29/45 , H01L29/66272 , H01L29/732
Abstract: A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.
Abstract translation: 提供了一种改进的双极晶体管，其可以在集电极电压的有限范围内提供改进的增益，早期电压，击穿电压和线性度。 已知晶体管的增益可以随集电极电压而变化。 本文件教导了通过提供用于耗尽区域的结构来减少该变化的方法，该装置优先耗尽。 因此，晶体管的响应可以更线性化。
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