公开(公告)号：US11313034B2

公开(公告)日：2022-04-26

申请号：US15814497

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Yong Cao ,  Daniel Lee Diehl ,  Huixiong Dai ,  Khoi Phan ,  Christopher Ngai ,  Rongjun Wang ,  Xianmin Tang

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/06 ,  C23C14/00 ,  C23C14/34 ,  C23C14/14 ,  C23C14/22 ,  C23C14/54 ,  C23C14/04

Abstract: In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.

公开(公告)号：US20190212656A1

公开(公告)日：2019-07-11

申请号：US16244381

申请日：2019-01-10

Applicant: Applied Materials, Inc. ,  International Business Machines Corporation

Inventor： Huixiong Dai ,  Weimin Zeng ,  Daniel Lee Diehl ,  Yong Cao ,  Hsiang Ning Wu ,  Khoi Phan ,  Christopher S. Ngai ,  Mingwei Zhu ,  Michael Stolfi ,  Nelson M. Felix ,  Ekmini Anuja DeSilva ,  Xianmin Tang

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70058 ,  G03F7/0035 ,  G03F7/2022 ,  G03F7/70033

Abstract: Methods for depositing an EUV hardmask film on a substrate by physical vapor deposition which allow for reduced EUV dose. Certain embodiments relate to metal oxide hardmasks which require smaller amounts of EUV energy for processing and allow for higher throughput. A silicon or metal target can be sputtered onto a substrate in the presence of an oxygen and or doping gas containing plasma.

公开(公告)号：US20180135183A1

公开(公告)日：2018-05-17

申请号：US15806500

申请日：2017-11-08

Applicant: Applied Materials, Inc.

Inventor： Weimin Zeng ,  Yong Cao ,  Daniel Lee Diehl ,  Khoi Phan ,  Huixiong Dai ,  Christopher S. Ngai

IPC: C23C16/56 ,  C23C16/455 ,  G03F1/22

CPC classification number: C23C16/56 ,  C23C14/06 ,  C23C14/5826 ,  C23C14/5846 ,  C23C16/0272 ,  C23C16/455 ,  G03F1/22

Abstract: Processing methods comprising depositing an initial hardmask film on a substrate by physical vapor deposition and exposing the initial hardmask film to a treatment plasma comprising a silane compound to form the hardmask.