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    TRANSMIT AND RECEIVE PERFORMANCE OF A NEAR FIELD COMMUNICATION DEVICE THAT USES A SINGLE ANTENNA
    1.
    发明申请
    TRANSMIT AND RECEIVE PERFORMANCE OF A NEAR FIELD COMMUNICATION DEVICE THAT USES A SINGLE ANTENNA 有权
    使用单个天线的近场通信设备的发射和接收性能

    公开(公告)号：US20120064826A1

    公开(公告)日：2012-03-15

    申请号：US12879008

    申请日：2010-09-10

    Applicant: Yogesh Darwhekar ,  Alok Prakash Joshi ,  Gireesh Rajendran ,  Subhashish Mukherjee ,  Apu Sivadas

    Inventor： Yogesh Darwhekar ,  Alok Prakash Joshi ,  Gireesh Rajendran ,  Subhashish Mukherjee ,  Apu Sivadas

    IPC: H04B5/00

    CPC classification number: H04B5/0031 ,  H04B5/0081

    Abstract: A near field communication (NFC) transceiver contains a transmitter portion to generate a transmit wireless signal, and a receiver portion to receive and process a receive wireless signal. The circuit further contains a shunt capacitor, a switch, and an antenna interface to couple the transmitter portion and the receiver portion to an antenna designed to communicate with external antennas by inductive coupling. The switch couples the shunt capacitor in parallel with the antenna in one operational mode, and decouples the shunt capacitor from the antenna in another operational mode. Transmit and receive performance of the NFC transceiver are enhanced as a result.

    Abstract translation: 近场通信（NFC）收发器包含用于产生发射无线信号的发射机部分和接收和处理接收无线信号的接收机部分。 该电路还包括分流电容器，开关和天线接口，用于将发射器部分和接收器部分耦合到设计成通过电感耦合与外部天线通信的天线。 开关在一个操作模式下将分流电容器与天线并联，并在另一种工作模式下将并联电容器与天线分离。 结果，增强了NFC收发器的发送和接收性能。

    Transmit and receive performance of a near field communication device that uses a single antenna
    3.
    发明授权
    Transmit and receive performance of a near field communication device that uses a single antenna 有权
    使用单个天线的近场通信设备的发射和接收性能

    公开(公告)号：US08249524B2

    公开(公告)日：2012-08-21

    申请号：US12879008

    申请日：2010-09-10

    Applicant: Yogesh Darwhekar ,  Alok Prakash Joshi ,  Gireesh Rajendran ,  Subhashish Mukherjee ,  Apu Sivadas

    Inventor： Yogesh Darwhekar ,  Alok Prakash Joshi ,  Gireesh Rajendran ,  Subhashish Mukherjee ,  Apu Sivadas

    IPC: H04B1/44

    CPC classification number: H04B5/0031 ,  H04B5/0081

    Abstract: A near field communication (NFC) transceiver contains a transmitter portion to generate a transmit wireless signal, and a receiver portion to receive and process a receive wireless signal. The circuit further contains a shunt capacitor, a switch, and an antenna interface to couple the transmitter portion and the receiver portion to an antenna designed to communicate with external antennas by inductive coupling. The switch couples the shunt capacitor in parallel with the antenna in one operational mode, and decouples the shunt capacitor from the antenna in another operational mode. Transmit and receive performance of the NFC transceiver are enhanced as a result.

    Abstract translation: 近场通信（NFC）收发器包含用于产生发射无线信号的发射机部分和接收和处理接收无线信号的接收机部分。 该电路还包括分流电容器，开关和天线接口，用于将发射器部分和接收器部分耦合到设计成通过电感耦合与外部天线通信的天线。 开关在一个操作模式下将分流电容器与天线并联，并在另一种工作模式下将并联电容器与天线分离。 结果，增强了NFC收发器的发送和接收性能。

    CIRCUITS, PROCESSES, DEVICES AND SYSTEMS FOR FULL INTEGRATION OF RF FRONT END MODULE INCLUDING RF POWER AMPLIFIER
    5.
    发明申请
    CIRCUITS, PROCESSES, DEVICES AND SYSTEMS FOR FULL INTEGRATION OF RF FRONT END MODULE INCLUDING RF POWER AMPLIFIER 有权
    射频前端模块，包括射频功率放大器的充分整合的电路，过程，设备和系统

    公开(公告)号：US20090289721A1

    公开(公告)日：2009-11-26

    申请号：US12435668

    申请日：2009-05-05

    Applicant: Gireesh Rajendran ,  Apu Sivadas ,  Subhashish Mukherjee

    Inventor： Gireesh Rajendran ,  Apu Sivadas ,  Subhashish Mukherjee

    IPC: H03F3/04

    CPC classification number: H03F3/45188 ,  H03F3/195 ,  H03F3/211 ,  H03F3/72 ,  H03F2200/09 ,  H03F2200/222 ,  H03F2200/294 ,  H03F2200/541 ,  H03F2203/45302 ,  H03F2203/45396 ,  H03F2203/45481 ,  H03F2203/45726 ,  H03F2203/45731

    Abstract: An electronic circuit comprising a transistor-based RF (radio frequency) power amplifier (112) having balanced outputs (172, 176), a transistor-based receiver RF amplifier (116) having balanced inputs (152, 156) ohmically connected to said balanced outputs (172, 176) respectively of said RF power amplifier (112), and a balun (114) having a primary (182, 186) and a secondary (188), said primary (182, 186) having primary connections and a supply connection (185) of said primary (182, 186) intermediate said primary connections and said primary connections ohmically connected both to said balanced outputs (172, 176) of said RF power amplifier (112) respectively and to said balanced inputs (152, 156) of said receiver RF amplifier, thereby to switchlessly couple RF between the balun (114) and the RF power amplifier (112) and switchlessly couple RF between the balun (114) and the receiver RF amplifier (116). Other electronic circuits, processes, devices and systems are disclosed.

    Abstract translation: 一种电子电路，包括具有平衡输出（172,176）的基于晶体管的RF（射频）功率放大器（112），具有平衡输入（152,156）的基于晶体管的接收器RF放大器（116） 分别具有所述RF功率放大器（112）的输出端（172,176）和具有初级（182,186）和次级（188）的平衡 - 不平衡转换器（114），所述初级（182,186）具有初级连接和电源 所述初级连接器（182,186）中间的所述初级连接器（182,186）的连接（185,181）与所述主要连接件和所述主要连接件分别与所述RF功率放大器（112）的所述平衡输出端（172,176）和所述平衡输入端 ），从而在平衡不平衡变换器（114）和RF功率放大器（112）之间无连接地耦合RF，并且在平衡不平衡变换器（114）和接收器RF放大器（116）之间切换耦合RF。 公开了其它电子电路，工艺，装置和系统。

    Controlling the range and resolution of offset correction applied to the output of a charge coupled device
    9.
    发明授权
    Controlling the range and resolution of offset correction applied to the output of a charge coupled device 有权
    控制应用于电荷耦合器件的输出的偏移校正的范围和分辨率

    公开(公告)号：US06806901B1

    公开(公告)日：2004-10-19

    申请号：US09703476

    申请日：2000-10-31

    Applicant: Subhashish Mukherjee ,  Suhas R. Kulhalli

    Inventor： Subhashish Mukherjee ,  Suhas R. Kulhalli

    IPC: H04N964

    CPC classification number: H04N5/367

    Abstract: An offset correction circuit which enables a designer to control the correction range irrespective of the amplification sought to be achieved to the image component of the input signal. The offset correction further enables the designer to perform offset correction to a low resolution. Both range and resolution can potentially be attained using only two stages thereby minimizing power consumption and also minimizing introduction of any undesirable components.

    Abstract translation: 一种偏移校正电路，其使得设计者能够控制校正范围，而不管寻求实现对输入信号的图像分量的放大。 偏移校正进一步使得设计者能够对低分辨率执行偏移校正。 范围和分辨率都可以仅使用两个阶段来实现，从而最大限度地降低功耗并且最小化任何不希望的组件的引入。

    MOS uni-directional, differential voltage amplifier capable of amplifying signals having input common-mode voltage beneath voltage of lower supply and integrated circuit substrate
    10.
    发明授权
    MOS uni-directional, differential voltage amplifier capable of amplifying signals having input common-mode voltage beneath voltage of lower supply and integrated circuit substrate 失效
    MOS单向差分电压放大器，能够放大具有低电压和集成电路基板电压以下的输入共模电压的信号

    公开(公告)号：US5463347A

    公开(公告)日：1995-10-31

    申请号：US353604

    申请日：1994-12-12

    Applicant: Steven C. Jones ,  Subhashish Mukherjee ,  Stephen C. Kwan

    Inventor： Steven C. Jones ,  Subhashish Mukherjee ,  Stephen C. Kwan

    IPC: H01L27/088 ,  H03F1/22 ,  H03F3/45 ,  H03F3/16

    CPC classification number: H03F3/45179 ,  H01L27/088 ,  H03F1/223 ,  H03F2203/45394

    Abstract: An amplifier, preferably an integrated circuit, capable of accepting input common mode voltages below the circuit reference voltage or substrate voltage in the case of an integrated circuit. The amplifier comprises a differential voltage input having higher and lower voltage terminals, a first NMOS transistor coupled between a voltage supply and the higher voltage terminal and a second NMOS transistor coupled between the voltage supply and the lower voltage terminal. A third NMOS transistor is coupled between the voltage supply and the first transistor gate, a fourth NMOS transistor is coupled between the voltage supply and the second transistor gate and a sink resistor is coupled between the gate of the second transistor and the lower voltage terminal. A differential resistor is coupled between the gates of the first and second transistors. The first and second transistors include a source and a backgate coupled to each other and electrically isolated from the substrate with the source of each of the first and second transistors being coupled to a different one of the input terminals. The third and fourth transistors include a source and a backgate coupled to each other and electrically isolated from the substrate with the source of each of the third and fourth transistors coupled to opposite ends of the differential resistor. The circuit further includes a PMOS mirror circuit for providing an output.

    Abstract translation: 在集成电路的情况下，能够接受低于电路参考电压或衬底电压的输入共模电压的放大器，优选集成电路。 放大器包括具有更高和更低电压端子的差分电压输入端，耦合在电压源和较高电压端子之间的第一NMOS晶体管和耦合在电压源和低电压端子之间的第二NMOS晶体管。 第三NMOS晶体管耦合在电压源和第一晶体管栅极之间，第四NMOS晶体管耦合在电压源和第二晶体管栅极之间，并且吸收电阻耦合在第二晶体管的栅极和低电压端之间。 差分电阻耦合在第一和第二晶体管的栅极之间。 第一和第二晶体管包括彼此耦合并且与衬底电隔离的源极和后栅极，其中第一和第二晶体管中的每一个的源极耦合到不同的一个输入端子。 第三和第四晶体管包括彼此耦合并且与衬底电隔离的源极和后栅极，其中第三和第四晶体管中的每一个的源极耦合到差分电阻器的相对端。 电路还包括用于提供输出的PMOS镜电路。

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