公开(公告)号：US08525195B2

公开(公告)日：2013-09-03

申请号：US12873662

申请日：2010-09-01

Applicant: Hajime Nago ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

Inventor： Hajime Nago ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC: H01L33/02

CPC classification number: H01L33/12 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/32 ,  H01S5/34333

Abstract: According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0

Abstract translation: 根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。 发光部分设置在半导体层之间。 发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。 阱层包含Inx1Ga1-x1N。 本体设置在n型半导体层和发光部之间。 主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。 第二层包含Inx2Ga1-x2N。 第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。 中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0

公开(公告)号：US20120286284A1

公开(公告)日：2012-11-15

申请号：US13206700

申请日：2011-08-10

Applicant: Koichi TACHIBANA ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

Inventor： Koichi TACHIBANA ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

IPC: H01L33/32

CPC classification number: H01L33/12 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01S5/3407 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

Abstract: According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.

Abstract translation: 根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。 基础层包括氮化物半导体。 基础层的位错密度不大于5×108cm-2。 第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。 发光部分设置在第一半导体层上。 发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。 阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。 具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

公开(公告)号：US20120056220A1

公开(公告)日：2012-03-08

申请号：US13226045

申请日：2011-09-06

Applicant: Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/60

CPC classification number: H01L33/007 ,  H01L33/46

Abstract: According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.

Abstract translation: 根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。 第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。 在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。 在第一电介质层，第二电介质层和衬底上形成第一半导体层。 第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

公开(公告)号：US20120032209A1

公开(公告)日：2012-02-09

申请号：US13032934

申请日：2011-02-23

Applicant: Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/32

CPC classification number: H01L33/06 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/04 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer.

Abstract translation: 根据一个实施例，半导体发光器件包括：半导体层; 多层结构体; 和发光部分。 多层结构体设置在半导体层之间，并且包括第一层和包括In的第二层。 发光部分与多层结构体和p型半导体层之间的多层结构体接触，并且包括阻挡层和包括In的阱层，III族元素中的In组成比高于In组成比中的In组成比 第三组元素在第二层。 多层结构体的平均晶格常数大于n型半导体层的平均晶格常数。 多层结构体的平均晶格常数与发光部的平均晶格常数之差小于多层结构体与n型半导体层的平均晶格常数之差。

公开(公告)号：US20120012814A1

公开(公告)日：2012-01-19

申请号：US13035304

申请日：2011-02-25

Applicant: Yoshiyuki HARADA ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

Inventor： Yoshiyuki HARADA ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC: H01L33/06 ,  H01L33/08

CPC classification number: H01L33/08 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。 发光部分包括多个发光层。 每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。 每个阱层区域具有常见的An In组成比。 每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

公开(公告)号：US20110215291A1

公开(公告)日：2011-09-08

申请号：US12873586

申请日：2010-09-01

Applicant: Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L31/0256 ,  H01L31/0352

CPC classification number: H01L31/022466 ,  B82Y20/00 ,  H01L31/035236 ,  H01L33/42

Abstract: According to one embodiment, a semiconductor light-emitting device using an ITON layer for a transparent conductor and realizing low drive voltage, high luminance efficiency, and uniformed light emission intensity distribution is provided. The semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and whose uppermost part is a p-type GaN layer; an ITON (Indium Tin Oxynitride) layer formed on the p-type GaN layer; an ITO (Indium Tin Oxide) layer formed on the ITON layer; a first metal electrode formed on a part on the ITO layer; and a second metal electrode formed in contact with the n-type semiconductor layer.

Abstract translation: 根据一个实施例，提供了一种使用用于透明导体的ITON层并实现低驱动电压，高亮度效率和均匀的发光强度分布的半导体发光器件。 半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 在有源层上形成的p型半导体层，其最上部是p型GaN层; 形成在p型GaN层上的ITON（铟锡氧氮化物）层; 形成在ITON层上的ITO（氧化铟锡）层; 形成在所述ITO层的一部分上的第一金属电极; 以及形成为与n型半导体层接触的第二金属电极。

公开(公告)号：US07773648B2

公开(公告)日：2010-08-10

申请号：US11365531

申请日：2006-03-02

Applicant: Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

Inventor： Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

IPC: H01S3/04 ,  H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3216

Abstract: Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.

Abstract translation: 这里公开了高可靠性半导体器件。 激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层 设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。 由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。

公开(公告)号：US07763907B2

公开(公告)日：2010-07-27

申请号：US11850404

申请日：2007-09-05

Applicant: Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

Inventor： Koichi Tachibana ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/38

CPC classification number: H01L33/32 ,  H01L33/02 ,  H01L33/16

Abstract: A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

Abstract translation: 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

公开(公告)号：US20090059986A1

公开(公告)日：2009-03-05

申请号：US12039303

申请日：2008-02-28

Applicant: Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

Inventor： Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

IPC: H01S5/30

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2218 ,  H01S2301/18

Abstract: A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer implements a ridge extending in a predetermined direction; a pair of first current block layers provided on the second clad layer sandwiching the ridge along the extending direction; and a pair of second current block layers provided between the first current block layers on the second clad layer and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge, the second current block layers having a refractive index larger than the first current block layers at an emission peak wavelength of the active layer.

Abstract translation: 半导体发光元件包括设置在基板上的第一导电类型的第一覆盖层; 设置在所述第一包层上的有源层; 设置在所述有源层上的第二导电类型的第二覆盖层，所述第二覆层的上部实现沿预定方向延伸的脊; 一对第一电流阻挡层，设置在沿所述延伸方向夹着所述脊的所述第二覆层上; 以及一对第二电流阻挡层，设置在所述第二覆盖层上的所述第一电流阻挡层之间并且在所述脊的侧壁处与所述第一电流阻挡层接触，选择性地夹持包括所述脊的边缘的区域，所述第二电流 在有源层的发射峰值波长处具有大于第一电流阻挡层的折射率的阻挡层。

公开(公告)号：US07498618B2

公开(公告)日：2009-03-03

申请号：US11507493

申请日：2006-08-22

Applicant: Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

Inventor： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

IPC: H01L29/778

CPC classification number: H01L29/7787 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316

Abstract: A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.

Abstract translation: 一种氮化物半导体器件包括：衬底本体，包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。 第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。 第一主电极设置在导电部分的上方，第二主电极设置在高电阻部分的上方。